Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

Metal-Organic-Vapor Phase Epitaxy of Ingan Quantum Dots and Their Applications in Light-Emitting Diodes

Growth of Light-Emitting Devices Based on InGaN Quantum Dots by MOVPE

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Studies on the Composition of Ingan/Aln Quantum Dots Grown by Molecular Beam Epitaxy

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

InGaN Quantum Dots for Micro-Leds

Epitaxial growth of quantum dots on van der Waals surfaces

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Epitaxial Lateral Overgrowth of Ingan/Gan Multiple Quantum Wells on Hvpe Gan Template

Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Green LED Development in Polar and Non-Polar Growth Orientation

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers