Growth of Light-Emitting Devices Based on InGaN Quantum Dots by MOVPE

Lai Wang,Di Yang,Jiadong Yu,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.1109/cleopr.2015.7375891

2015-01-01

Abstract:In this paper, we reported our recent progresses on growth of InGaN quantum dots and related light-emitting devices by metal organic vapor phase epitaxy.

What problem does this paper attempt to address?

Metal-Organic-Vapor Phase Epitaxy of Ingan Quantum Dots and Their Applications in Light-Emitting Diodes

Wang Lai,Yang Di,Hao Zhi-Biao,Luo Yi

DOI: https://doi.org/10.1088/1674-1056/24/6/067303

2015-01-01

Chinese Physics B

Abstract:In GaN quantum dot is a promising optoelectronic material,which combines the advantages of low-dimensional and wide-gap semiconductors.The growth of In GaN quantum dots is still not mature,especially the growth by metal–organic–vapor phase epitaxy（MOVPE）,which is challenge due to the lack of 、itin-situ monitoring tool.In this paper,we reviewed the development of In GaN quantum dot growth by MOVPE,including our work on growth of near-UV,green,and red In GaN quantum dots.In addition,we also introduced the applications of In GaN quantum dots on visible light emitting diodes.
Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Lai Wang,Lei Wang,Jiadong Yu,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.1021/acsami.8b16767

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Stranski-Krastanov (SK) growth mode is widely adopted for the self-assembled growth of semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential and a thick wetting layer (WL) is formed beneath the QD layer. In this paper, we report the metal organic vapor phase epitaxy of green InGaN QDs, employing a growth interruption method to decrease the critical thickness and improve the morphology of QDs. The QDs exhibit similar photoluminescence properties with those grown by conventional SK mode, implying the existence of a WL. We experimentally verify that the formation of QDs, whether based on the SK mode or the growth interruption method, conforms to the phase separation theory. However, the density of QDs grown by the interruption method exhibits abnormal dependence on the strain when a quantum well (QW) is inserted beneath the QD layer. Furthermore, the underlying QW not only influences the morphology of the QDs but also plays as a reservoir of electrons, which helps enhance the photoluminescence and the electroluminescence of the QDs. The method of QD growth with improved morphology and luminescence by introducing the QW-QD coupled nanostructure is universally applicable to similar material systems. Furthermore, a 550 nm green light-emitting diode (LED) and a 526 nm superluminescent LED based on the nanostructure are demonstrated.
Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Xue Zhang,Zhiwei Xing,Wenxian Yang,Haibing Qiu,Ying Gu,Yuta Suzuki,Sakuya Kaneko,Yuki Matsuda,Shinji Izumi,Yuichi Nakamura,Yong Cai,Lifeng Bian,Shulong Lu,Atsushi Tackeuchi

DOI: https://doi.org/10.3390/nano12050800

IF: 5.3

2022-01-01

Nanomaterials

Abstract:Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the crystal quality. The lower In/Ga flux ratio and lower growth temperature are favorable for the formation of QDs of long emission wavelength. Moreover, the nitrogen modulation epitaxy method can extend the wavelength of QDs from green to red. As a result, visible light emissions from 460 nm to 622 nm have been achieved. Furthermore, a 505 nm green light-emitting diode (LED) based on InGaN/GaN MQDs was prepared. The LED has a low external quantum efficiency of 0.14% and shows an efficiency droop with increasing injection current. However, electroluminescence spectra exhibited a strong wavelength stability, with a negligible shift of less than 1.0 nm as injection current density increased from 8 A/cm2 to 160 A/cm2, owing to the screening of polarization-related electric field in QDs.
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Xiuxun Han,Zhen Chen,Dabing Li,Jiejun Wu,Jiemin Li,Xuehao Sun,Xianglin Liu,Peide Han,Xiaohui Wang,Qinsheng Zhu,Zhanguo Wang

DOI: https://doi.org/10.1016/j.jcrysgro.2004.02.108

IF: 1.8

2004-01-01

Journal of Crystal Growth

Abstract:Multilayer InGaN/GaN quantum dots (QDs) were grown on sapphire substrates through a three-dimensional growth mode, which was initiated by a special passivation processing introduced into the normal growth procedure. Surface morphology and photoluminescence properties of QDs with different stacking periods (from one to four) were investigated. The temperature dependences of the PL peak energies were found to show a great difference between two-layer and three-layer QDs. The fast redshift and the reversed sigmoidal temperature dependences of the PL energies for the former were attributed to the thermally activated carrier transfer from small to large dots. However, the increase of both the dot size and the spatial space among dots with the growing stacking periods reduced the carrier escape and retrapping.
Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Yi Luo,Lai Wang,Hongtao Li,Yanjun Han,Changzheng Sun,Zhibiao Hao

DOI: https://doi.org/10.1109/ipgc.2008.4781318

2008-01-01

Abstract:GaN-based materials and devices are expected to play an important role in future information and energy applications. In this paper, we summarized our recent results in metal organic vapor phase epitaxy growth of nitride materials and blue light-emitting diodes (LEDs) on c-plane sapphire substrates. First, the key parameters for high quality GaN bulk growth have been discussed and an evaluating method for crystal structures based on the high resolution X-ray diffraction (HR-XRD) has been introduced. It is found that the optimal recrystallization time and the growth of high temperature buffer layer using a low V/III ratio are helpful to improve the crystal quality of GaN. Furthermore, in order to determine the twist angle of GaN films precisely, a simple and effective geometrical model is established to distinguish the contributions of tilt and twist to the full width at half maximum of HR-XRD Phi-scan curves. Second, the growth of low In content InGaN templates of 500 nm has been studied. The crystal quality of thick InGaN templates is improved efficiently by inserting a 15 nm low temperature growth InGaN buffer layer, which is attributed to the rapid strain relaxation. Finally, the growth and electrical characteristics of blue InGaN/GaN multiple-quantum-well LEDs are presented. The doping profiles are found to influence the electrical characteristics of LEDs dramatically by capacitance-voltage measurements.
Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Luming Yu,Lei Wang,Peilong Yang,Zhibiao Hao,Jiadong Yu,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao LI,Lai Wang

DOI: https://doi.org/10.1364/ome.465134

2022-01-01

Optical Materials Express

Abstract:Micro-scale light-emitting diodes (micro-LEDs) are regarded as the next generation display technology. Compared to blue and green ones, InGaN-based red micro-LEDs require higher indium composition in their active region, which is quite challenging for material growth. Here, high-indium-composition InGaN quantum dots (QDs) with a density of 3 × 1010 cm-2 are self-assembly grown by metal-organic vapor phase epitaxy (MOVPE) based on a precursor-alternate-admittance method. The growth mechanism is systematically studied, and consequently a 613-nm red QDs sample with an internal quantum efficiency (IQE) of 12% is demonstrated. Furthermore, when micro-LEDs based on these red InGaN QDs with a chip size of 1-20 µm are fabricated, an electroluminescence blueshift to yellow and green is observed. The 20-µm and 1-µm micro-LEDs show 4.92% and 1.78% external quantum efficiency (EQE) at 0.3 and 20 A/cm2, respectively. By introducing multiple quantum wells (MQWs) pre-strained layer beneath the QD layers, a 10-µm micro-LED with 638 nm emission wavelength is demonstrated, with a price of reduced EQE to 0.03% at 10 A/cm2.
Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Q. Gao,Y. Kim,H. J. Joyce,P. Lever,S. Mokkapati,M. Buda,H. H. Tan,C. Jagadish

DOI: https://doi.org/10.1109/icton.2006.248327

2006-01-01

Abstract:InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper
Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Xue Zhang,Wenxian Yang,Zhiwei Xing,Haibing Qiu,Ying Gu,Lifeng Bian,Shulong Lu,Hua Qin,Yong Cai,Yuta Suzuki,Sakuya Kaneko,Yuki Matsuda,Shinji Izumi,Yuichi Nakamura,Atsushi Tackeuchi

DOI: https://doi.org/10.3390/cryst11111312

IF: 2.7

2021-01-01

Crystals

Abstract:InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved and InGaN QDs exhibit a relatively uniform size distribution and good dispersity. Strong localization effect in as-grown InGaN QDs has been evidenced by temperature-dependent photoluminescence (PL). The variation of peak energy is as small as 35 meV with increasing temperature from 10 K to 300 K, implying excellent temperature stability of emission wavelength for InGaN MQDs. Moreover, the radiative and nonradiative recombination times were calculated by time-resolved PL (TRPL) measurements, and the temperature dependence of PL decay times reveal that radiative recombination dominates the recombination process due to the low dislocation density of QDs structure.
InGaN Quantum Dots for Micro-Leds

Lai Wang,Luming Yu,Zhenhao Li,Anda Cheng,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1063/5.0226660

IF: 5.6

2024-01-01

APL Photonics

Abstract:Micro-scale light-emitting diodes (micro-LEDs) have received widespread attention in recent years for applications in display and optical communication. Compared with conventional quantum well active regions, quantum dots (QDs) can increase the carrier concentration at the same current density, which is beneficial for improving the efficiency and bandwidth of LEDs at low current densities. This is exactly what micro-LEDs need for display and communication applications. In this Perspective, we give a general introduction to InGaN QDs and provide an overview of the growth of InGaN QDs by metal-organic chemical vapor deposition. We then discuss the advances in green and red micro-LEDs based on InGaN QDs for display applications. This is followed by recent progress on high-speed blue micro-LEDs, which have great potential for use in chip-to-chip optical interconnections. Finally, we address the remaining challenges for a further improvement in InGaN QD-based micro-LEDs.
Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Hailiang Dong,Kai Qu,Jian Liang,Aiqin Zhang,Zhigang Jia,Wei Jia,Bingshe Xu,Xuguang Liu,Guoqiang Li,Yucheng Wu

DOI: https://doi.org/10.1016/j.optmat.2019.109554

IF: 3.754

2020-01-01

Optical Materials

Abstract:InGaN self-assembled quantum dots (QDs) have been grown by metal-organic chemical vapor deposition. The surface morphologies of InGaN QDs were investigated for different number of periods in the range of one to five. Interfacial formation mechanism of InGaN QDs was investigated by phase separation theory and different strain in active zone. In-rich localized states and interfacial atomic images were observed by spherical aberration corrected transmission electron microscopy. Furthermore, the formation mechanism of InGaN QDs was discussed according to growth kinetics of indium (In) atom migration. The optical properties of QDs-like were tested by temperature-dependent photoluminescence. These results show internal quantum efficiency increases with increasing periodicity owing to increasing total accumulated strain. QDs are formed spontaneously owing to indium composition fluctuations in InGaN layer. The variations of peak energy with increasing temperature are explained by carrier dynamics as a result of size inhomogeneity and carrier localization in InGaN/GaN active zone. These results provide experimental data and theoretical basis for fabricating high quality InGaN QDs.
Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

ZH Li,ZJ Yang,ZX Qin,YZ Tong,TJ Yu,S Lu,H Yang,GY Zhang

DOI: https://doi.org/10.1088/0256-307x/20/8/349

2003-01-01

Chinese Physics Letters

Abstract:The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20mA injection current at room temperature. With increasing forward current from 10mA to 50mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.
Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Wenbin Lv,Lai Wang,Jiaxing Wang,Yuchen Xing,Jiyuan Zheng,Di Yang,Zhibiao Hao,Yi Luo

DOI: https://doi.org/10.7567/jjap.52.08jg13

IF: 1.5

2013-01-01

Japanese Journal of Applied Physics

Abstract:We have successfully implemented green and red light-emitting diodes (LEDs) based on InGaN/GaN quantum dots (QDs) grown by controlling the process of the growth interruption method using metal organic vapor phase epitaxy (MOVPE). It is found that the three-step growth interruption method and the underlying InGaN/GaN superlattice structure are beneficial for achieving greater indium incorporation in InGaN QDs. As a result, green and red LEDs with electroluminescence (EL) peak energies of 2.28 eV at 20 mA and 1.70 eV at 80 mA, respectively, are demonstrated. The EL emission energy blue shift of the green QD LEDs is 140 meV as injection current increases from 5 to 50 mA, while that of the red LED is 70 meV as injection current increases from 75 to 100 mA.
InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Lai Wang,Xiao Meng,Di Yang,Zilan Wang,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.48550/arXiv.1612.06355

2016-11-25

Abstract:V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

Mesoscale and Nanoscale Physics,Optics
Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Zhongjie Cui,Shuaitao Qin,Haiyang He,Zhuoqi Wen,Dan Yang,Zhiyan Piao,Shiliang Mei,Wanlu Zhang,Ruiqian Guo

DOI: https://doi.org/10.1021/acsanm.3c05167

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:As a kind of luminescent nanomaterial, InP quantum dots (QDs) have been regarded as one of the most potential nontoxic alternatives for cadmium-based QDs in the light-emitting devices, and much progress has been obtained recently. However, their growth kinetics remains not fully revealed yet, and the effects of the shelling process on as-synthesized InP cores have been rarely investigated. Herein, the growth kinetics of InP QDs is investigated via the convenient method of varying halide ions, and their sequential growth is proposed according to the discontinuous evolution of their first exciton absorption peaks, especially the observed typical positions, which is different from the reported continuous evolution previously and means that the specific sized InP cores appeared during the growth stage. Moreover, the impacts of ZnS are analyzed from the quantum confinement effect of ZnS on InP cores with different sizes and interfacial heterovalent bonds. The coordination between these two aspects decides the final positions of the first exciton absorption peaks of InP/ZnS QDs. Compared with the positions of the first exciton absorption peaks of bare InP QDs, insufficient confinement of the ZnS shell to small InP cores causes the red-shift, but the heterovalent bonds at the interface cause the blue-shift. Furthermore, the emissions of final InP/ZnS QDs are influenced, and the emission from 484 to 578 nm is obtained via this facile synthetic protocol. It is thought that this study can reveal the growth of InP QDs and provide guidance to design rational InP-based QDs with desired emission and high performance, contributing to the fabrication of efficient light-emitting devices.
Epitaxial Lateral Overgrowth of Ingan/Gan Multiple Quantum Wells on Hvpe Gan Template

Xingbin Li,Tongjun Yu,Yuebin Tao,Junjing Deng,Chenglong Xu,Guoyi Zhang

DOI: https://doi.org/10.1002/pssc.201100409

2011-01-01

Abstract:In this study, epitaxial lateral overgrowth (ELOG) on different kinds of patterned hydride vapour phase epitaxy (HVPE) templates was successfully realized by metal organic chemical vapor deposition (MOCVD). InGaN/GaN MQWs were also grown and LED chips were then fabricated. The properties of the wafers and the performance of the LED chips were investigated. The experiment results showed obvious improvement of surface and crystal qualities of the wafers. LED chips also exhibited better luminous properties. Therefore ELOG method is a very effective way to improve crystal quality and oxygen plasma treatment is useful for surface optimization. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Studies on the Composition of Ingan/Aln Quantum Dots Grown by Molecular Beam Epitaxy

Hu Yi-Bin,Hao Zhi-Biao,Hu Jian-Nan,Niu Lang,Wang Lai,Luo Yi

DOI: https://doi.org/10.7498/aps.61.237804

IF: 0.906

2012-01-01

Acta Physica Sinica

Abstract:In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.
Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

T. Detchprohm,M. Zhu,Y. Li,Y. Xia,L. Liu,D. Hanser,C. Wetzel

DOI: https://doi.org/10.1016/j.jcrysgro.2009.01.060

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500nm, a minimum InN-fraction of ∼14% is needed for both, a- and m-plane quantum wells (QWs), while ∼8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.
Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Lei Liu,Lei Wang,Cimang Lu,Ding Li,Ningyang Liu,Lei Li,Wei Yang,Wenyu Cao,Weihua Chen,Weimin Du,Xiaodong Hu,Zhe Chuan Feng,Wei Huang,Yueh-Chien Lee

DOI: https://doi.org/10.1007/s00339-012-6967-6

2012-01-01

Applied Physics A

Abstract:Two ultraviolet InGaN/GaN light emitting diodes (LEDs) with and without InGaN underlying layer beneath the multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. Based on the photoluminescence excitation measurements, it was found that the Stokes shift of the sample with a 10-nm-thick In0.1Ga0.9N underlying layer was about 64 meV, which was smaller than that of the reference sample without InGaN underlying layer, indicating a reduced quantum-confined Stark effect (QCSE) due to the decrease of the piezoelectric polarization field in the MQWs. In addition, by fitting the photon energy dependence of carrier lifetime values, the radiative recombination lifetime of the sample with and without InGaN underlying layer were obtained about 1.22 and 1.58 ns at 10 K, respectively. The shorter carrier lifetime also confirmed that the QCSE in the MQWs was weakened after inserting the InGaN underlying layer. In addition, although the depth of carrier localization in the sample with InGaN underlying layer became smaller, the nonradiative recombination centers (NRCs) inside it decreased, and thus suppressed the nonradiative re-combination process significantly according to the electroluminescence measurement results. Compared to the reference sample, the efficiency droop behavior was delayed in the sample with InGaN underlying layer and the droop effect was also effectively alleviated. Therefore, the enhanced light-emission efficiency of ultraviolet InGaN/GaN MQW LEDs could be attributed to the decrease of QCSE and NRCs.
Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

JS Huang,Z Chen,XD Luo,ZY Xu,WK Ge

DOI: https://doi.org/10.1016/j.jcrysgro.2003.08.008

IF: 1.8

2004-01-01

Journal of Crystal Growth

Abstract:We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN quantum dots (QDs) grown on passivated GaN surfaces by metalorganic chemical vapor deposition (MOCVD). Strong PL emission was observed from the QDs structure even at room temperature. By comparing the PL and TRPL dependence on temperature, a significant difference between the QD and wetting layer emissions was revealed. The QD emission is characterized by a strong exciton localization effect, which leads to a larger thermal activation energy, a nearly constant radiative lifetime independent of temperature and an unusual temperature behavior of the PL peak energy.
Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Di Yang,Lai Wang,Wen-Bin Lv,Zhi-Biao Hao,Yi Luo

DOI: https://doi.org/10.1016/j.spmi.2015.02.005

IF: 3.22

2015-01-01

Superlattices and Microstructures

Abstract:Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra. (C) 2015 Elsevier Ltd. All rights reserved.

Growth of Light-Emitting Devices Based on InGaN Quantum Dots by MOVPE

Metal-Organic-Vapor Phase Epitaxy of Ingan Quantum Dots and Their Applications in Light-Emitting Diodes

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

InGaN Quantum Dots for Micro-Leds

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Epitaxial Lateral Overgrowth of Ingan/Gan Multiple Quantum Wells on Hvpe Gan Template

Studies on the Composition of Ingan/Aln Quantum Dots Grown by Molecular Beam Epitaxy

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots