Abstract:The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Forward leakage currents in GaN p-i-n diodes

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Microanalyses of the Reverse-Bias Leakage Current Increase in the Laser Lift off GaN-based Light Emitting Diodes

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Temperature‐dependent Ac Current‐voltage‐capacitance Characteristics of GaN‐based Light‐emitting Diodes under High Forward Bias

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

Do All Screw Dislocations Cause Leakage in GaN-based Devices?

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

On the Temperature Dependence of Electron Leakage from the Active Region of Gainn/Gan Light-Emitting Diodes

Accurate Electrical Properties of Semiconductor GaN Blue Light Emitting Diodes at Large Forward Bias Voltage

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings