Accurate Electrical Properties of Semiconductor GaN Blue Light Emitting Diodes at Large Forward Bias Voltage

李杨,冯列峰,李丁,王存达,邢琼勇,张国义

DOI: https://doi.org/10.16136/j.joel.2013.04.009

2013-01-01

Abstract:At large forward bias voltage,the accurate electrical properties of semiconductor GaN-based blue light-emitting diode(LED) with multiple-quantum well(MQW) structure prepared by metal organic chemical vapor deposition(MOCVD) were measured by single capacitance-voltage(C-V) method and single current-voltage(I-V) method,as well as our self-built method,respectively.After comparing the experimental results,we find that a single C-V or I-V method cannot be considered as an accurate characterization method,because they can only reflect the apparent characteristics rather than the junction parameters of LEDs.However,both the apparent capacitance Cp measured by C-V method and the junction capacitance C measured by our self-built method display obvious negative value at large forward bias and low frequency,which is in conflict with the well known Shockley′s p-n junction theory and model which only include increasing diffusion capacitance and certainly no negative capacitance.Furthermore,the ideal factors of LEDs obtained from both our method and I-V method far exceed the traditional theoretical values.Finally,the accurate expressions of junction capacitance and junction conductance on voltage and frequency are obtained.These results will provide an experimental basis for the study of semiconductor diode junction theory.