Abstract:The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

On the Reverse Gate Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Investigation of Device Geometry- and Temperature-Dependent Characteristics of Algan/Gan Lateral Field-Effect Rectifier

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs