Study on Aging Properties of GaN LEDs Based on the Measurement of Nonradiative Recombination Defect Density

郭祖强,钱可元
DOI: https://doi.org/10.16818/j.issn1001-5868.2013.06.004
2013-01-01
Abstract:The nonradiative recombination defect introducd by lattice mismatching is an important factor affecting the properties of high-power GaN-based LEDs. The current-voltage characteristics, ideality factors, internal quantum efficiencies and luminescence properties of LED samples before and after 1600 hours aging tests were studied. At the same time, the effects of nonradiative recombination defect densities on LED's aging properties were measured. The results show that nonradiative recombination defect is the basic reason for the increase of tunneling current, deviation from ideal model of the current-voltage characteristic, increase of ideality factor and nonlinear phenomena of light-output. So based on which, the relationship model between nonradiative recombination defect density and LED's aging property is built, and a method for evaluation of LED's aging performance is proposed.
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