Abstract:We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes (LEDs) and developed some optimization strategies. Our aim is to increase the optical performance of LEDs at low current density (0.02–2 A cm−2) for micro-LEDs used in display applications. First, we investigated the effects of quantum well (QW) number in blue In0.225Ga0.775N/In0.10Ga0.90N LEDs. We found that at low current density LEDs with lower QW number have much higher internal quantum efficiency (IQE) than those with higher QW number. Second, we also numerically investigated the effects of the electron blocking layer, n-side quantum barrier (QB) doping concentration, QB material and QW width with single quantum well (SQW) structure. For SQW LEDs at low current density, the electron injection efficiency was nearly one. In terms of the QB doping concentration, we found that an appropriate n-side QB doping can ensure Shockley-Read-Hall recombination appropriately equal Auger recombination, which ultimately results in high IQE. For QB material, we choose In0.05Ga0.95N as QB material to achieve both high IQE and low forward voltage. Regarding the QW width, we found that although LEDs with wide QW had high IQE, there were also two peaks in the electroluminescence (EL) spectrum, thus 3 nm was used as an optimal QW width. The original 5-QW structure showed a lower IQE range from 50 to 80% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 3.06 V at 1 A cm−2. In contrast, our optimized LED structure achieved an IQE of 92.3% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 2.72 V at 1 A/cm2.

Optical Characterization of Light-Emitting Diodes Fabricated with Vertical and Flip-Chip Structure

Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

P‐12.10: Study on Flip‐Chip Structure of GaN‐Based Micro‐LED

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement of Micro-Led Top Emission Through Surface Nanostructures and Chip Design

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Compromise between illumination performance and modulation bandwidth for micro-size white light-emitting diode by selecting injected current

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips

Growth and Characterization of Micro-LED Based on GaN Substrate

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint

Operating Behavior of Micro-Leds on a GaN Substrate at Ultrahigh Injection Current Densities

Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate with Self-Assembled Conical Arrays

Junction temperature and reliability of high-power flip-chip light emitting diodes

Research on Auto-split GaN-based Vertical Structure LED