Inverted V-shaped Size-Dependent Emission Wavelength Shift in InGaN Micro-Leds with Size Down to 1 Μm

Bo Liu,Chenyang Sun,Luming Yu,Zhibiao Hao,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Lin Gan,Lai Wang
DOI: https://doi.org/10.1063/5.0221292
IF: 4
2024-01-01
Applied Physics Letters
Abstract:The size-dependent emission wavelength shift of micro-scale light emitting diodes (micro-LEDs) has been frequently reported in recent publications, but its underlying physical mechanism has not yet been thoroughly elucidated. Here, we fabricate and characterize the red, green, and blue InGaN micro-LED mesas with different diameters down to 1 μm. As the size decreases, all the samples of different colors show an inverted V-shaped photoluminescence wavelength variation trend, first a red shift and then a blue shift, and the shifting range is larger for samples with longer wavelengths. Micro-Raman spectrum confirms that the stress was significantly released after scaling down the size from epitaxial wafer to 1 μm. The theoretical simulations show that the red and blue shifts are, respectively, attributed to the bandgap narrowing and the weakening of the quantum-confined Stark effect caused by strain relaxation, which dominate successively.
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