Abstract:Micro-LED has attracted tremendous attention as next-generation display, but InGaN red-green-blue (RGB) based high-efficiency micro-LEDs, especially red InGaN micro-LED, face significant challenges and the optoelectronic performance is inevitably affected by environmental factors such as varying temperature and operating current density. Here, we demonstrated the RGB InGaN micro-LEDs, and investigated the effects of temperature and current density for the InGaN RGB micro-LED display. We found that temperature increase can lead to the changes of electrical characteristics, the shifts in electroluminescence spectra, the increase of full width at half maximum and the decreases of light output power, external quantum efficiency, power efficiency, and ambient contrast ratios, while current density increase can also give rise to different changing trends of the varieties of parameters mentioned just above for the RGB micro-LED display, creating great challenges for its application in practical scenarios. Despite of the varying electrical and optical charateristics, relatively high and stable colour gamut of the RGB display can be maintained under changing temperature and current density. Based on the results above, mechanisms on the temperature and current density effects were analyzed in detail, which would be helpful to predict the parameters change of micro-LED display caused by temperature and current density, and provided guidance for improving the performance of InGaN micro-LED display in the future.

Angular color shift of micro-LED displays

High-efficiency micro-LED displays with indistinguishable color shift

Design and simulation of light field patterns for angular color variation reduction in micro-LED and mini-LED RGB arrays

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs

Inverted V-shaped Size-Dependent Emission Wavelength Shift in InGaN Micro-Leds with Size Down to 1 Μm

Study on the effect of size on InGaN red micro-LEDs

High performance color‐converted micro‐LED displays

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Red, green and blue InGaN micro-LEDs for display application: temperature and current density effects

Ultra-low-defect Homoepitaxial Micro-Leds with Enhanced Efficiency and Monochromaticity for High-Ppi AR/MR Displays

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

The scaling of the microLED and the advantage of 2D materials

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Alleviating the Crosstalk Effect Via a Fine-Moulded Light-Blocking Matrix for Colour-Converted Micro-Led Display with a 122% NTSC Gamut

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

Transfer-printed, tandem microscale light-emitting diodes for full-color displays