Abstract:The microdisplays for augmented reality and virtual reality require ultrasmall micro light-emitting-diodes (μLEDs) with a dimension of ≤5 μm. Furthermore, the microdisplays also need three kinds of such μLEDs each emitting red, green, and blue emission. Currently, in addition to a great challenge for achieving ultrasmall μLEDs mainly based on III-nitride semiconductors, another fundamental barrier is due to an extreme difficulty in growing III-nitride-based red LEDs. So far, there has not been any effective approach to obtain high indium content InGaN as an active region required for a red LED while maintaining high optical performance. In this paper, we have demonstrated a selective epitaxy growth approach using a template featuring microhole arrays. This allows us to not only obtain the natural formation of ultrasmall μLEDs but also achieve InGaN with enhanced indium content at an elevated growth temperature, at which it is impossible to obtain InGaN-based red LEDs on a standard planar surface. By means of this approach, we have demonstrated red μLEDs (at an emission wavelength of 642 nm) with a dimension of 2 μm, exhibiting a high luminance of 3.5 × 10<sup>7</sup> cd/m<sup>2</sup> and a peak external quantum efficiency of 1.75% measured in a wafer form (i.e., without any packaging to enhance an extraction efficiency). In contrast, an LED grown under identical growth conditions but on a standard planar surface shows green emission at 538 nm. This highlights that our approach provides a simple solution that can address the two major challenges mentioned above.

InGaN-based RGB Micro-Led Arrays

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

MOVPE-grown InGaN Quantum-Well Red Micro-Leds

Ultrasmall and Ultradense InGaN-based RGB Monochromatic Micro-Light-emitting Diode Arrays by Pixilation of Conductive P-Gan

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

The Performance of InGaN-based Red/green Micro-Leds

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

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InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

True‐Red InGaN Light‐Emitting Diodes for Display Applications

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Study on the effect of size on InGaN red micro-LEDs

Investigation of InGaN-based red/green micro-light-emitting diodes

A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission

Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

High-efficiency micro-LED displays with indistinguishable color shift

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector