Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

Optically and Electrically Invariant Multi-color Single InGaN/GaN Nanowire Light-emitting Diodes on Silicon Substrate under Mechanical Compression

Single nanowire green InGaN/GaN light emitting diodes.

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Light Extraction in Individual Gan Nanowires on Si for Leds

Electrical and Optical Properties of Flexible Nanowire Blue Light-Emitting Diodes under Mechanical Bending (conference Presentation)

InGaN/GaN multi-quantum-well nanowires and light emitting

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Stress Management on Underlying GaN-based Epitaxial Films: A New Vision for Achieving High-Performance LEDs on Si Substrates

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Growth and Device Characteristics of Nano-Folding Ingan/Gan Multiple Quantum Well Led

Optical and Electrical Properties of Gan-Based Light Emitting Diodes Grown on Micro and Nano-Scale Patterned Si Substrate

Stress and Dislocation Control of GaN Epitaxial Films Grown on Si Substrates and Their Application in High-Performance Light-Emitting Diodes

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates