Phosphor-free Micro-Pyramid InGaN-based White Light-Emitting Diode with a High Color Rendering Index on a (3-Ga2o3 Substrate

Yiwei Duo,Yu Yin,Rui He,Renfeng Chen,Yijian Song,Hao Long,Junxi Wang,Tongbo Wei
DOI: https://doi.org/10.1364/ol.512307
IF: 3.6
2024-01-01
Optics Letters
Abstract:We demonstrate the InGaN/GaN-based monolithic micro pyramid white (MPW) vertical LED (VLED) grown on (-201)-oriented beta-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10-11) side walls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on beta-Ga2O3 has great potential for highly efficient phosphor-free white light emission. (c) 2024 Optica Publishing Group
What problem does this paper attempt to address?