Abstract:GaN-based μLEDs with superior properties have enabled outstanding achievements in emerging micro-display, high-quality illumination, and communication applications, especially white-light visible light communication (WL-VLC). WL-VLC systems can simultaneously provide white-light solid-state lighting (SSL) while realizing high-speed wireless optical communication. However, the bandwidth of conventional white-light LEDs is limited by the long-lifetime yellow yttrium aluminum garnet (YAG) phosphor, which restricts the available communication performance. In this paper, white-light GaN-μLEDs combining blue InGaN-μLEDs with green/red perovskite quantum dots (PQDs) are proposed and experimentally demonstrated. Green PQDs (G-PQDs) and red PQDs (R-PQDs) with narrow emission spectrum and short fluorescence lifetime as color converters instead of the conventional slow-response YAG phosphor are mixed with high-bandwidth blue InGaN-μLEDs to generate white light. The communication and illumination performances of the WL-VLC system based on the white-light GaN-based μLEDs are systematically investigated. The VLC properties of monochromatic light (green/red) from G-PQDs or R-PQDs are studied in order to optimize the performance of the white light. The modulation bandwidths of blue InGaN-μLEDs, G-PQDs, and R-PQDs are up to 162 MHz, 64 MHz, and 90 MHz respectively. Furthermore, the white-light bandwidth of 57.5 MHz and the Commission Internationale de L'Eclairage (CIE) of (0.3327, 0.3114) for the WL-VLC system are achieved successfully. These results demonstrate the great potential and the direction of the white-light GaN-μLEDs with PQDs as color converters to be applied for VLC and SSL simultaneously. Meanwhile, these results contribute to the implementation of full-color micro-displays based on μLEDs with high-quality PQDs as color-conversion materials.

InGaN/GaN MQW Violet-LED Grown by LP-MOCVD

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Properties of Ingan Violet-Led Structure

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Effect of MQW Structure on Characteristic of GaN-Base Violet LED

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

A 326 nm pure ultraviolet light sources achieved in a Ga 2 O 3 microwire heterojunction through interface optimization and surface-modification

White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication

InGaN/GaN multi-quantum-well nanowires and light emitting

Monolithic Semi-Polar ( 1 1 ¯ 01 ) InGaN/GaN Near White Light-Emitting Diodes on Micro-Striped Si (100) Substrate*

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds