Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga2O3 substrate

Yiwei Duo,Yu Yin,Rui He,Renfeng Chen,Yijian Song,Hao Long,Junxi Wang,Tongbo Wei
DOI: https://doi.org/10.1364/OL.512307
2024-01-15
Abstract:We demonstrate the InGaN/GaN-based monolithic micro-pyramid white (MPW) vertical LED (VLED) grown on (-201)-oriented β-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10-11) sidewalls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on β-Ga2O3 has great potential for highly efficient phosphor-free white light emission.
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