Abstract:<p class="a-plus-plus">InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.</p>

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

InGaN/GaN multi-quantum-well nanowires and light emitting

Luminescence Characteristics in Hexagonal and Cubic‐phase GaN on Micropatterned Si(100) Substrate

The Origins of Double Emission Peaks in Electroluminescence Spectrum from Ingan/Gan Mqw Led

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells