Abstract:<p class="a-plus-plus">InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.</p>

Manipulation of In(Ga)N monolayer epitaxy by MBE

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures.

Group-III nitride heteroepitaxial films approaching bulk-class quality

High Performance Gallium Nitride Based Blue Light Emitting Diode Material Epitaxy and Dry Etching Fabrication Technology

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Insight into the Ga/In Flux Ratio and Crystallographic Plane Dependence of MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrates

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy