Abstract:Owing to the lack of large-diameter and affordable AlN bulk crystals, high-quality AlN films grown on sapphire substrates have been intensively analyzed for the potential applications in optoelectronic and electronic devices. Herein, we successfully fabricated low-defect-density AlN thin films on large-offcut-angle sapphire substrates combining magnetron sputtering and metal–organic chemical vapor deposition. It is found that the crystalline qualities of AlN films strongly depend on the densities and geometric features of atomic steps. When high-density zigzag macrosteps are formed on the surface, they can induce dislocation inclination toward multiple directions rather than a single one. In this situation, the inclined dislocations can interact with not only vertical dislocations but also other inclined dislocations. Profiting from the large inclination angles (30–78°), the lateral interaction range of dislocations exhibits a 6-fold increase at most, leading to more frequent dislocation interactions within a relatively thin layer. As a result, the threading dislocation density value of 1 μm thick AlN is reduced down to 1.4 × 10<sup>9</sup> cm<sup>–2</sup>, demonstrating an 80% decrease in comparison with its counterpart without the macrostep-induced dislocation redirection effect. This approach is expected to boost the development of low-cost and high-performance devices on AlN/sapphire templates.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.cgd.1c00170?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.cgd.1c00170</a>.Characterization of surface morphologies in large areas using OM, SEM, and AFM and uniformity of crystalline quality within the 2 in. wafer demonstrated by the HRXRD measurement at five different locations (<a class="ext-link" href="/doi/suppl/10.1021/acs.cgd.1c00170/suppl_file/cg1c00170_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c -sapphire substrate by plasma-assisted molecular beam epitaxy

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates