Abstract:Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with and polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices

Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates

Buckling-Based Method for Measuring the Strain–Photonic Coupling Effect of GaAs Nanoribbons

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

A Buckling-based Method for Measuring the Strain-Photonic Coupling Effect of GaAs Nanoribbons

Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

High-Spatial-Resolution Strain Measurements by Auger Electron Spectroscopy in Epitaxial-Lateral-Overgrowth Gan

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Nanoscale mapping of surface strain in tapered nanorods using confocal photoluminescence spectroscopy

Strain Release in GaN Epitaxy on 4 degrees Off-Axis 4H-SiC

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy