Abstract:The problem of achieving high light extraction efficiency in Al-rich AlxGa1-xN is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich AlxGa1-xN alloy using the Heyd-Scuseria-Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew-Burke-Ernzerhof functional, in which the spin-orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich AlxGa1-xN. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN)(m)/(GaN)(n) (m>n) super-lattice (SL) substituting for Al-rich AlxGa1-xN disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p(x)- and p(y)-like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E perpendicular to c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN)(m)/(GaN)(n) SL is analyzed in depth.

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Biaxial and Uniaxial Strain Effects on the Ultraviolet Emission Efficiencies of AlxGa1−xN Films with Different Al Concentrations

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Anisotropic Optical Polarization Dependence on Internal Strain in AlGaN Epilayer Grown on AlxGa1−xN Templates

The Calculation of the Strain and Compositional Modulation of the Wide Bandgap Semiconductor Alloy Band Structures for Ultra Violet Opto-Electronic Applications

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (aln)m/(gan)n(m>n) Superlattice Substitution for Al-rich AlGaN Disorder Alloy: Ultra-Thin GaN Layer Modulation

Modulating Optical Polarization of Al-rich AlGaN via Mg Dopant

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer

Optical Anisotropy Modulation in Nonpolar A-Plane AlGaN by Manipulating the Anisotropic In-Plane Strains Through SiNx Interlayers Engineering

Strain Dependent Anisotropy in Photoluminescence of Heteroepitaxial Nonpolar A-Plane ZnO Layers

Strain Modulated Nanostructure Patterned AlGaN-based Deep Ultraviolet Multiple-Quantum-wells for Polarization Control and Light Extraction Efficiency Enhancement

Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study