Strain-driven light polarization switching in deep ultraviolet nitride emitters

T. K. Sharma,Doron Naveh,E. Towe
DOI: https://doi.org/10.1103/PhysRevB.84.035305
2011-01-09
Abstract:Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the polarization characteristics of nitride semiconductor materials (especially AlGaN) in deep ultraviolet (DUV) light - emitting diodes (LEDs). Specifically, the research aims to understand and explain how the polarization characteristics of light in AlGaN layers change under different aluminum compositions and strain conditions. ### Main problems: 1. **Polarization characteristic conversion**: When the aluminum composition (x in Al\(_x\)Ga\(_{1 - x}\)N) increases, the polarization characteristics of light change from the transverse electric (TE) mode to the transverse magnetic (TM) mode. The specific mechanism of this transformation and its impact on device performance are not yet fully clear. 2. **Critical aluminum composition**: Different studies have reported different values of the critical aluminum composition, which makes it complicated to determine a unified standard. For example, Nam et al. reported that polarization switching occurs when \(x>0.25\), while Ikeda et al. observed this phenomenon when \(x = 0.125\). 3. **Strain effect**: Strain has a significant impact on the band structure of AlGaN layers, which in turn affects their luminescence characteristics. Especially in the case of high aluminum composition, strain can change the polarization characteristics, leading to the conversion from TE to TM mode. 4. **Quantum confinement effect**: For very thin quantum wells (QWs), the quantum confinement effect may change the polarization characteristics, making the theoretical predictions inconsistent with the experimental results. ### Research objectives: - **Quantitative analysis**: Through detailed theoretical calculations, quantitatively analyze the influence of strain on the band structure and polarization characteristics of AlGaN layers. - **Optimal design**: Provide guidance for the design of efficient DUV LEDs, ensuring that these devices can achieve TE - mode light emission at a specific aluminum composition, thereby improving the light extraction efficiency (LEE). - **Understand the physical mechanism**: Gain an in - depth understanding of the physical mechanisms of strain - driven valence - band anti - crossing and polarization characteristic conversion. ### Conclusion: By combining the Bir - Pikus Hamiltonian model in the 6x6 k·p form and numerical calculations, the authors found that strain and aluminum composition have a significant impact on the polarization characteristics of AlGaN layers. The critical aluminum composition increases linearly with the aluminum composition of the template/substrate material, and there is a critical point above which the polarization characteristics of light will change from the TE mode to the TM mode. In addition, the quantum confinement effect can reverse this trend in some cases. To achieve efficient TE - mode light emission, it is necessary to select appropriate template materials and quantum well thicknesses to optimize device performance.