Abstract:The 2D AlN/BN planer heterostructure is a promising wide band gap semiconductor, but systematic studies of its bandgap and optical characteristics under applied strain are scarce. Here, the engineering property of 2D AlN/BN comprising bandgap nature transition and optical absorption capability (from unstrained to strained) have been investigated using density functional theory calculations. The formation energy calculations confirm the stability of the simulated nanoheterostructure. The electronic band structure calculations demonstrate that nanoheterostructure is an indirect bandgap material with a large bandgap of 5.26 eV, which can be modified effectively by applying strain. According to the calculations, the transition from indirect to direct band gap behavior has been observed at +15% biaxial strain with 2.71 eV band gap energy. Meanwhile, calculations for optical absorption and dielectric function reveal that the system has significant absorption peaks in the ultraviolet region which are very sensitive to applied strain. As strain increases, the first absorption peaks are shifted towards a lower energy range from 5.73 eV (Ꜫ= 0 %) to 3.76 eV (Ꜫ = +15%), which features an enhancement of optical absorption for solar and solar-blind regions. Furthermore, we determined that the band edge positions in 2D AlN/BN straddled the water redox potential under strain, indicating its effectiveness as a proficient photocatalyst. These characteristics make 2D AlN/BN planer nanoheterostructure a promising candidate for applications in optoelectronics and photocatalytic water splitting performance.

The Calculation of the Strain and Compositional Modulation of the Wide Bandgap Semiconductor Alloy Band Structures for Ultra Violet Opto-Electronic Applications

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Biaxial and Uniaxial Strain Effects on the Ultraviolet Emission Efficiencies of AlxGa1−xN Films with Different Al Concentrations

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Exploring Optimal Uv Emission Windows for Algan and Alinn Alloys Grown on Different Templates

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

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Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

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Calculation of the valence band structure in strained In 0.7Ga0.3As devices with different surface orientation

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Influence of Biaxial Strain on Near-Band-Edge Optical Properties of C- and A-Plane Wurtzite-Inn Films

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Meta-GGA study of 2D AlN/BN planer heterostructure and performance enhancement via strain engineering

Strain and external electric field modulation of the electronic and optical properties of GaN/WSe2 vdWHs