Abstract:The valence subband structures of uniaxial-strained wurtzite (WZ) GaN-AlGaN quantum wells (QW's) are calculated using multiband effective-mass theory. The optical gain is investigated using a numerical approach in which we account for the subband structure modification and mixing due to the anisotropic strain in the QW plane. We show that the mixing of the HH and LH bases in the uniaxial-strained (0001) GaN-AlGaN QW decouples |X> and |Y> at the /spl Gamma/ point, giving two topmost subbands, Y1 and X1, which can be more widely separated than the HH1 and LH1 subbands in the biaxial-strained (0001) GaN-AlGaN QW. We resolve the states of the subband dispersion in terms of the |X>, |Y>, and |Z> bases, and show the compositional variation as a function of the in-plane wavevector. Under uniaxial strain, it is possible to exploit the existence of the preferred symmetry at the valence band maximum and the reduced band-edge density-of-states due to the anisotropic in-plane energy dispersion to achieve lower transparency carrier and current densities and higher differential gain in comparison with a pseudomorphic biaxial-strained QW. We show that, for a QW laser structure with the optical cavity along the x axis, uniaxial compressive strain in the y direction shows greater improvement than the uniaxial tensile strain in the x direction of the same magnitude. Thus, a suitable uniaxial strain could be used to improve the threshold performance of WZ GaN-based QW lasers.

Biaxial and Uniaxial Strain Effects on the Ultraviolet Emission Efficiencies of AlxGa1−xN Films with Different Al Concentrations

Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

The Calculation of the Strain and Compositional Modulation of the Wide Bandgap Semiconductor Alloy Band Structures for Ultra Violet Opto-Electronic Applications

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Exploring Optimal Uv Emission Windows for Algan and Alinn Alloys Grown on Different Templates

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Improving the Emission Efficiency of MBE-grown GaN/AlN QDs by Strain Control

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Influence of Biaxial Strain on Near-Band-Edge Optical Properties of C- and A-Plane Wurtzite-Inn Films

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Strain effects on electronic structure and optics of al-Doped monolayer GaS