Abstract:Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established themselves as the key materials for building ultraviolet (UV) optoelectronic and power electronic devices. However, further improvements to device performance are lagging, largely due to the difficulties in precisely controlling carrier behavior, both carrier generation and carrier transport, within AlGaN-based devices. Fortunately, it has been discovered that instead of using AlGaN layers with fixed Al compositions, by grading the Al composition along the growth direction, it is possible to (1) generate high-density electrons and holes via polarization-induced doping; (2) manipulate carrier transport behavior via energy band modulation, also known as 'band engineering'. Consequently, such compositionally graded AlGaN alloys have attracted extensive interest as promising building blocks for efficient AlGaN-based UV light emitters and power electronic devices. In this review, we focus on the unique physical properties of graded AlGaN alloys and highlight the key roles that such graded structures play in device exploration. Firstly, we elaborate on the underlying mechanisms of efficient carrier generation and transport manipulation enabled by graded AlGaN alloys. Thereafter, we comprehensively summarize and discuss the recent progress in UV light emitters and power electronic devices incorporating graded AlGaN structures. Finally, we outline the prospects associated with the implementation of graded AlGaN alloys in the pursuit of high-performance optoelectronic and power electronic devices.

Exploring Optimal Uv Emission Windows for Algan and Alinn Alloys Grown on Different Templates

Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations

BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs

Biaxial and Uniaxial Strain Effects on the Ultraviolet Emission Efficiencies of AlxGa1−xN Films with Different Al Concentrations

The Calculation of the Strain and Compositional Modulation of the Wide Bandgap Semiconductor Alloy Band Structures for Ultra Violet Opto-Electronic Applications

Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (aln)m/(gan)n(m>n) Superlattice Substitution for Al-rich AlGaN Disorder Alloy: Ultra-Thin GaN Layer Modulation

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Fabrication of AlGaN Nanorods with Different Al Compositions for Emission Enhancement in UV Range

Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Compositionally Graded Iii-Nitride Alloys: Building Blocks For Efficient Ultraviolet Optoelectronics And Power Electronics

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Compositional Modulation and Optical Emission in AlGaN Epitaxial Films

Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes