Zone-center Optical Phonons in Wurtzite GaN and AlN

GH Wei,J Zi,KM Zhang,XD Xie

DOI: https://doi.org/10.1063/1.366212

IF: 2.877

1997-01-01

Journal of Applied Physics

Abstract:Phonons at the zone-center of wurtzite semiconductors GaN and AlN are studied theoretically within a rigid-ion model. The anisotropies of the zone-center optical phonons induced by the macroscopic electric field are investigated.

What problem does this paper attempt to address?

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

W. D. Huang,Y. J. Ren,J. F. Yan,Q. Wu,S. H. Zhang

DOI: https://doi.org/10.1051/epjap/2010100340

2011-01-01

Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.
Vibrating modes and dispersive spectra of full polar optical phonons in wurtzite GaN/AlGaN rectangular nanowires

Li Zhang

DOI: https://doi.org/10.1016/j.spmi.2012.04.005

IF: 3.22

2012-01-01

Superlattices and Microstructures

Abstract:By employing the dielectric continuum model and Loudon's uniaxial crystal model, the full polar optical phonon modes including the propagating (PR) modes, the quasi-confined (QC) modes, the half-space (HS) modes, and the interface optical (IO) modes in a quasi-one-dimensional (Q1D) wurtzite rectangular nanowire (NW) structure are deduced and analyzed. The analytical phonon states, their dispersion equations and polarization eigenvectors are derived. Numerical calculations for the dispersive spectra of these phonon modes are performed on a wurtzite GaN/Al0.15Ga0.85N rectangular wurtzite NW. The behavior of the PR modes reducing to the HS modes with the same order are observed clearly in the dispersive curves of these modes, which reveals that the present theories of phonon modes are self-consistency and correct for the description of phonon modes in wurtzite Q1D rectangular NW. Moreover, there are a series of yielding points in the dispersive curves of the PR modes. These observations and results reveal that the confined dimensionality and cross-section shape influence greatly the dispersive properties of phonon modes in wurtzite quantum confined systems. (C) 2012 Published by Elsevier Ltd.
Full Polar Optical Phonon States and Dispersive Spectra of a Wurtzite GaN/AlN Rectangular Quantum Wire

Li Zhang

DOI: https://doi.org/10.3906/fiz-1202-9

2012-01-01

TURKISH JOURNAL OF PHYSICS

Abstract:Within the framework of the dielectric continuum model and Loudon’s uniaxial crystal model, the full polar optical phonon modes including the quasi-confined (QC) modes, the propagating (PR) modes, the half-space (HS) modes, and the interface optical (IO) modes in a quasi-one-dimensional (Q1D) wurtzite rectangular quantum wire (QWR) structure are deduced and analyzed. The analytical phonon states, their dispersion equations and polar polarization eigenvectors are derived. Numerical calculation of dispersive spectra for these modes is performed on a wurtzite GaN/AlN rectangular QWR. The behavior of the QC mode reducing to the IO mode is observed clearly in the dispersive curves of these modes, which reveals that the present theories of phonon modes are self-consistency and correct for the description of phonon modes in wurtzite Q1D rectangular NW. These observations and results reveal that the confined dimensionality and cross-section shape influence greatly the dispersive properties of phonon modes in wurtzite quantum confined systems.
Polar quasi-confined optical phonon modes in wurtzite quasi-one-dimensional GaN/AlxGa1-xN quantum well wires

Li Zhang

2006-01-01

Chinese Journal of Semiconductors

Abstract:Based on the dielectric continuum model and Loudon's uniaxial crystal model, quasi-confined (QC) optical phonon modes and electron-QC phonon coupling functions in quasi-one-dimensional (Q1D) wurtzite quantum well wires (QWWs) are deduced and analyzed. Numerical calculations on an AlN/GaN/AlN wurtzite QWW are performed. The results reveal that the dispersions of the QC modes are quite obvious only when the free wave-number kz in the z-direction and the azimuthal quantum number m are small. The reduced behavior of the QC modes in wurtzite quantum systems is clearly observed. Through the discussion of the electron-QC mode coupling functions, it is found that the lower-frequency QC modes in the high-frequency region play a more important role in the electron-QC phonon interactions. Moreover, our computations also prove that kz and m have a similar influence on the electron-QC phonon coupling properties.
Polar Oscillation and Dispersion Properties of Quasi-Confined Optical Phonon Modes in a Wurtzite GaN/AlxGa1−xN Nanowire

Li Zhang,Jun-Jie Shi

DOI: https://doi.org/10.1016/j.apsusc.2005.09.014

IF: 6.7

2005-01-01

Applied Surface Science

Abstract:Under the dielectric continuum model and Loudon’s uniaxial crystal model, the properties of the quasi-confined (QC) optical phonon dispersions and the electron–QC phonons coupling functions in a cylindrical wurtzite nanowire are deduced via the method of electrostatic potential expanding. Numerical computations on a GaN/Al0.15Ga0.85N wurtzite nanowire are performed. Results reveal that, for a definite axial wave number kz and a certain azimuthal quantum number m, there are infinite branches of QC modes. The frequencies of these QC modes fall into two regions, i.e. a high frequency region and a low frequency region. The dispersion of the QC modes are quite apparant only when kz and m are small. The lower-order QC modes in the higher frequency region play more important role in the electron–QC phonon interactions. Moreover, for the higher-order QC modes in the high frequency region, the electrostatic potentials “escaping” out of the well-layer material nearly could be ignored.
Lattice Dynamics of Zinc-Blende GaN and AlN: I. Bulk Phonons

J Zi,X Wan,GH Wei,KM Zhang,XD Xie

DOI: https://doi.org/10.1088/0953-8984/8/35/003

1996-01-01

Journal of Physics Condensed Matter

Abstract:The lattice dynamics of zinc-blende GaN and AlN were studied theoretically using a two-parameter Keating potential together with the long-range Coulomb interactions. Phonon frequencies transformed from those of the wurtzite counterparts were used to determine the two Keating parameters and the effective charge. We present for the first time the phonon dispersion curves for zinc-blende GaN and AlN. An interesting feature was found for the phonons propagating along the [110] direction, which does not exist in other III-V semiconductors.
Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

L. Li,D. Liu,J.-J. Shi

DOI: https://doi.org/10.1140/epjb/e2005-00139-x

2003-01-01

Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.
Lattice Dynamics of Wurtzite Semiconductors Gan and Aln

GH Wei,J Zi,KM Zhang,XD Xie

DOI: https://doi.org/10.1088/1004-423x/7/11/006

1998-01-01

Abstract:The lattice dynamics of wurtzite GaN and AM is studied within the framework of a rigid-ion model. Short-range interactions up to the third nearest neighbors are described by using a valence-force-field potential and the long-range Coulomb interactions between ions are calculated via. an Ewald summation. Phonon dispersion curves, density of states and specific heats are presented.
Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Li Zhang

DOI: https://doi.org/10.1016/j.spmi.2006.06.016

IF: 3.22

2006-01-01

Superlattices and Microstructures

Abstract:Within the framework of the dielectric continuum model and Loudon’s uniaxial crystal model, the properties of the quasi-confined (QC) optical phonon dispersions and the electron–QC phonons coupling functions in an asymmetric wurtzite quantum well (QW) are deduced via the method of electrostatic potential expanding. The present theoretical scheme can be treated as a generalization of the QC optical phonons in an ordinary wurtzite double heterostructures QWs, and it can be reduced naturally to the situation of the symmetrical wurtzite QW once a suite of symmetrical parameters are adopted. Numerical computation on an asymmetric AlN/ GaN/ Al0.15Ga0.85N wurtzite QW are performed, and a detailed comparison with the case in symmetric wurtzite QW is carried out. The calculated results show that the structural asymmetry of wurtzite QW changes greatly the dispersion behaviors and the electrostatic potential distributions of the QC optical phonon modes.
Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Zhang Li,Shi Jun-Jie

DOI: https://doi.org/10.1088/0253-6102/47/2/031

2007-01-01

Abstract:Based on the dielectric continuum model and Loudon's uniaxial crystal model, the properties of the quasi-confined (QC) optical phonon dispersions and the electron-QC phonons coupling functions in an asymmetric wurtzite quantum well (QW) are deduced via the method of electrostatic potential expanding. The present theoretical scheme can naturally reduce to the results in symmetric wurtzite QW once a set of symmetric structural parameters are chosen. Numerical calculations on an asymmetric AlN/GaN/Al0.15Ga0.85N wurtzite QW are performed. A detailed comparison with the symmetric wurtzite QW was also performed. The results show that the structural asymmetry of wurtzite QW changes greatly the dispersion frequencies and the electrostatic potential distributions of the QC optical phonon modes.
Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

Li Zhang,Jun-jie Shi,T. Tansley

DOI: https://doi.org/10.1103/PhysRevB.71.245324

IF: 3.7

2005-01-01

Physical Review B

Abstract:Within the framework of the dielectric continuum model and Loudon's uniaxial crystal model, the interface optical (IO) phonon modes and their electron-phonon interaction Frohlich-type Hamiltonian in a wurtzite nanowire are derived and studied. Numerical calculations are performed for the dispersion of the IO phonons and their electron-phonon coupling functions in a chosen wurtzite GaN-AlN nanowire. Our results show that the dispersions of the two branches of the IO phonon modes are obvious only if the axial direction wave number k(z) or the azimuthal quantum number m is small. Typical features in the dispersion curves are evidenced which are due to the anisotropy effects of wurtzite crystals. When k(z) or m is small enough, the IO phonon modes will disappear in the wurtzite nanowire. Moreover, k(z) and m have the analogical influence on the dispersion frequency of the IO phonons, especially for large k(z) or m. The frequencies of the two branches of the IO phonon modes with large k(z) or m converge to the two definite limiting values, which are the same as in the wurtzite GaN-AlN single planar heterojunction. The mathematical and physical reasons have been analyzed in depth. Our calculations for the electron-phonon coupling functions indicate that the strength of the electron-phonon interactions with the high-frequency modes is one order of magnitude larger than that with the low-frequency modes. The long-wavelength IO phonons with small m are more important for the electron-phonon interactions in a wurtzite GaN-AlN nanowire.
Confinement of Polar Optical Phonons in Quasi-One-dimensional Wurtzite GaN-based Quantum Well Wires: Propagating and Half-Space Phonon Modes

Li Zhang,Jun-Jie Shi

DOI: https://doi.org/10.2478/s11534-007-0017-6

2007-01-01

Central European Journal of Physics

Abstract:With the aid of the macroscopic dielectric continuum and Loudon’s uniaxial crystal models, the propagating (PR) and half-space (HS) optical phonon modes and corresponding Fröhlich-like electron-phonon interaction Hamiltonians in a quasi-one-dimensionality (Q1D) wurtzite quantum well wire (QWW) structure are derived and studied. Numerical calculations on a wurtzite GaN/Al0.15Ga0.85N QWW are performed, and discussion is focused mainly on the dependence of the frequency dispersions of PR and HS modes on the free wave-number k z in the z-direction and on the azimuthal quantum number m. The calculated results show that, for given k z and m, there usually exist infinite branches of PR and HS modes in the high-frequency range, and only finite branches of HS modes in the low-frequency range in wurtzite QWW systems. The reducing behaviors of the PR modes to HS modes, and of the HS mode to interface phonon mode have been observed clearly in Q1D wurtzite heterostructures. Moreover, the dispersive properties of the PR and HS modes in Q1D QWWs have been compared with those in Q2D quantum well structures. The underlying physical reasons for these features have also been analyzed in depth.
Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Li Zhang

DOI: https://doi.org/10.1142/S0217984906012237

2011-01-01

Modern Physics Letters B

Abstract:By employing the method of electrostatic potential expansion, the interface optical (10) and surface optical (SO) phonon modes and the corresponding Frohlich-like electron-phonon interaction Hamiltonian in a Q1D wurtzite cylindrical quantum well wire (QWW) embedded in nonpolar dielectric matrix are derived and studied based on the dielectric continuum model and Loudon's uniaxial crystal model. Numerical calculations for a wurtzite GaN/AlN QWW are mainly focused on the size- and dielectric-dependent IO and SO phonon spectra and electron-IO (SO) phonons coupling functions. Results reveal that, in general, there are two branches of TO phonon modes and one branch of SO mode in the system. The dispersions of the IO and SO modes are obvious only when the radii ratio beta and the dielectric constant of nonpolar matrix epsilon(d) is small. The limiting frequencies of IO and SO modes for very large beta have been analyzed in depth from both physical and mathematical viewpoints. The reducing behaviors of some modes have been clearly observed. Via the discussion of electrostatic potential spacial distributions of the IO and SO modes, we find that the QWW structures and dielectric constants of nonpolar matrix have little influence on the low-frequency IO mode, but they can greatly affect the potential distributions of high-frequency IO and SO modes. Detailed comparison of the dispersion behaviors of the modes and electron-phonon coupling properties in the Q1D wurtzite QWWs with those in wurtzite QWs and cubic quantum dots has also been made. Furthermore, part of the theoretical results derived in the present paper is consistent with the relatively experimental conclusion.
A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN superlattices

Lingjun Wang,Guanghong Wei,Jian Zi

DOI: https://doi.org/10.48550/arXiv.cond-mat/9812293

1998-12-17

Soft Condensed Matter

Abstract:A planar force-constant model is developed for longitudinal phonons of wurtzite GaN and AlN propagating along the [0001] direction. The proposed model is then applied to the study of the phonon modes in hexagonal GaN/AlN superlattices in the longitudinal polarization. The confinement of the superlattice phonon mode is discussed.
Polar Interface-Optical Vibrational Spectra in A Wurtzite Gan/Aln Rectangular Quantum Wire

L. Zhang

DOI: https://doi.org/10.1142/s0218625x0600786x

2006-01-01

Surface Review and Letters

Abstract:Under the dielectric continuum model and Loudon's uniaxial crystal model, the interface optical (IO) phonon modes in a quasi-one-dimensional (Q1D) wurtzite rectangular quantum wire are deduced and analyzed. Numerical calculation on a wurtzite GaN/AlN rectangular wurtzite quantum wire was performed. Results reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires. The degenerating behavior of the IO phonon modes in the Q1D wurtzite rectangular quantum wire has been clearly observed for small free wave number k(z) in z-direction. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. Moreover, once the anisotropy of the wurtzite material has been ignored, the present theories can be naturally reduced to the situation of Q1D cubic rectangular quantum wire systems.
Topological Effects of Phonons in GaN and AlGaN: A Potential Perspective for Tuning Phonon Transport

Dao-Sheng Tang,Bing-Yang Cao

DOI: https://doi.org/10.1063/5.0043623

IF: 2.877

2021-01-01

Journal of Applied Physics

Abstract:Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and disorders, and forbidden backscattering, topological phonon surface states show remarkable potential in addressing this issue. Herein, topological phonon analyses are performed on hexagonal wurtzite gallium nitride (GaN) to check the topological characteristics of phonons. And other nitrides of the same family, i.e., AlN and AlGaN crystals, are also calculated from a topological phonon phase transition perspective. With the aid of first-principle calculations and topological phonon theory, Weyl phonon states, which host surfaces states without backscattering, are investigated for all these materials. The results show that there is no nontrivial topological phonon state in GaN. However, by introducing Al atoms, i.e., in wurtzite type AlN and AlGaN, more than one Weyl phonon point is found, confirmed by obvious topological characteristics, including non-zero integer topological charges, source/sink in Berry curvature distributions, surface local density of states, and surface arcs. As AlN and AlGaN are typical materials in AlGaN/GaN heterostructure based electronics, the existence of topological phonon states in them will benefit thermal management by facilitating the design of one-way interfacial phonon transport without backscattering.
Potential Distribution of Polar Optical Phonons and Their Electron–phonon Coupling Properties of a Wurtizite GaN-based Trianglar Quantum Dot

Li Zhang

DOI: https://doi.org/10.1142/s0217979222500291

2022-01-01

Abstract:Polar optical phonon modes of a wurtzite nitride trianglar quantum dot (QD) are deduced and analyzed by using the dielectric continuum model. Based on a method of nonseparable variables, the Laplace equation of electristatic potential of the structure is solved, and the exact and analytical phonon states of exact confined (EC) modes are derived. It is found that the frequency of EC modes in the nitride trianglar QD systems can take both the longitudinal optical phonons in [Formula: see text]-direction [Formula: see text] and the longitudinal optical phonons in [Formula: see text]-plane [Formula: see text], which is obviously different from the cases of EC modes in wurtzite GaN quantum wells and quantum wires due to their different confined dimensions. The polarization eigenvectors and their orthogonality relations for the EC phonon modes are derived, which could form a set of orthogonal and completed basis vectors. By using the orthogonality relations of polarization eigenvector and field quantization method, the free phonon field of EC modes and the corresponding Fröhlich electron–phonon interaction Hamiltonian are obtained. Numerical calculations on a wurtztie GaN trianglar QD are performed. The spatial distributions of phonon potentials of EC phonons both in [Formula: see text]-plane and in [Formula: see text]-direction as well as the electron–phonon coupling strength are plotted and discussed. It is observed that the potential of these EC phonon modes is strictly confined within the trianglar QD ranges. The dependence of symmetries and electron–phonon coupling strength on the quantum numbers [Formula: see text] and [Formula: see text] in [Formula: see text]-plane, and the quantum number [Formula: see text] in [Formula: see text]-direction are analyzed in detail. The relationship of the total number of peaks and troughs with these quantum numbers are also discussed and induced.
Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Wendeng Huang,Guangde Chen,Honggang Ye,Yajie Ren

DOI: https://doi.org/10.1016/j.optmat.2013.03.032

IF: 3.754

2013-01-01

Optical Materials

Abstract:Within the framework of the modified random-element isodisplacement model and dielectric continuum model, the interface optical phonon and electron-interface optical coupling in GaN/Al x Ga 1− x N quantum wells with different aluminum concentration are studied in a fully numerical manner. The results show that aluminum concentration has important influence in the interface optical phonon and electron–phonon coupling in GaN/Al x Ga 1− x N quantum wells. When the aluminum concentration is lower (0.03 x x
Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices

Daosheng Tang,Limin Zhang

DOI: https://doi.org/10.1088/1402-4896/ace5eb

2023-07-11

Abstract:To effectively regulate thermal transport for the near-junction thermal management of GaN electronics, it is imperative to gain an understanding of the phonon characteristics of GaN nanostructures, particularly the topological phonon properties connected to low-dissipation surface phonon states. In this work, a comprehensive study on phonon modes and topological phonon properties is performed from first principles in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x (x=1,2,3) superlattices. Phonon modes, including the dispersion relation, density of states, and participation ratio, were calculated for six GaN superlattices. The participation ratio results did not reveal the localized phonon mode. In topological phonon analyses, it is found that Weyl phonons with a Chern number of 1(-1) are present in all six GaN superlattices, consisting of trivial (GaN) and nontrivial (AlN and AlGaN) combinations. These phonons are located on either side of the kz = 0 plane symmetrically in the Brillouin zone. With the increase in the number of phonon branches in superlattices, the number of Weyl phonon points also increases from dozens to hundreds. One Weyl phonon with significant and clean surface states is selected and analyzed for each GaN superlattice. Among them, the Weyl phonon in (GaN)2/(AlN)2 superlattice mainly results from the lattice vibrations of Al and Ga atoms, while the Weyl phonons in other superlattices mainly result from the lattice vibrations of N atoms. The Weyl phonons at opposite kz planes form pairs in (GaN)2/(AlN)2, AlGaN/GaN, and (AlGaN)2/(GaN)2. Effects of strain including biaxial and uniaxial strain on Weyl phonons in GaN/AlN and AlGaN/GaN superlattices are investigated. Results indicate that Weyl phonons persist in large strain states, however, no monoclinic trend is observed due to the accidental degeneracy of these superlattices.

Materials Science
Dispersive Spectra And Frohlich Electron-Phonon Interaction Hamiltonians Of Full Polar Optical Phonon States In A Wurtzite Nitride Nanowire: Quantum Size Effect

L. Zhang,J. J. Shi

DOI: https://doi.org/10.1088/0268-1242/27/5/055006

IF: 2.048

2012-01-01

Semiconductor Science and Technology

Abstract:Based on the dielectric continuum model and Loudon's uniaxial crystal model, the full polar optical phonon modes including the propagating (PR) modes, quasi-confined modes, half-space (HS) modes and interface optical modes in a quasi-one-dimensional (Q1D) wurtzite rectangular nanowire (NW) structure are deduced and analyzed. The analytical phonon states, their dispersion equations, polar polarization eigenvectors and Frohlich electron-phonon interaction Hamiltonians are derived. Numerical calculations of quantum size effect on the dispersive spectra for these modes are performed on a wurtzite GaN/Al0.15Ga0.85N rectangular wurtzite NW. The dispersive features of the four types of phonon modes are analyzed. The behavior of the PR modes reducing to the corresponding HS modes is observed clearly in the dispersive curves of these modes, which reveals that the present theories of phonon modes are self-consistency and correct for the description of phonon modes in wurtzite Q1D rectangular NW. Moreover, there are some yielding points in the dispersive curves of the PR modes. These observations and results reveal that the confined dimensionality and cross-sectional shape influence greatly the dispersive properties of phonon modes in wurtzite quantum confined systems.

Zone-center Optical Phonons in Wurtzite GaN and AlN

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Vibrating modes and dispersive spectra of full polar optical phonons in wurtzite GaN/AlGaN rectangular nanowires

Full Polar Optical Phonon States and Dispersive Spectra of a Wurtzite GaN/AlN Rectangular Quantum Wire

Polar quasi-confined optical phonon modes in wurtzite quasi-one-dimensional GaN/AlxGa1-xN quantum well wires

Polar Oscillation and Dispersion Properties of Quasi-Confined Optical Phonon Modes in a Wurtzite GaN/AlxGa1−xN Nanowire

Lattice Dynamics of Zinc-Blende GaN and AlN: I. Bulk Phonons

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Lattice Dynamics of Wurtzite Semiconductors Gan and Aln

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

Confinement of Polar Optical Phonons in Quasi-One-dimensional Wurtzite GaN-based Quantum Well Wires: Propagating and Half-Space Phonon Modes

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN superlattices

Polar Interface-Optical Vibrational Spectra in A Wurtzite Gan/Aln Rectangular Quantum Wire

Topological Effects of Phonons in GaN and AlGaN: A Potential Perspective for Tuning Phonon Transport

Potential Distribution of Polar Optical Phonons and Their Electron–phonon Coupling Properties of a Wurtizite GaN-based Trianglar Quantum Dot

Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices

Dispersive Spectra And Frohlich Electron-Phonon Interaction Hamiltonians Of Full Polar Optical Phonon States In A Wurtzite Nitride Nanowire: Quantum Size Effect