Band alignment of ultrawide bandgap ε-Ga2O3/h-BCN heterojunction epitaxially grown by metalorganic chemical vapor deposition
Xin Zhou,Li Zhang,Xiaodong Zhang,Yongjian Ma,Xing Wei,Tiwei Chen,Wenbo Tang,Kun Xu,Zhongming Zeng,Xinping Zhang,Houqiang Fu,BaoShun Zhang
DOI: https://doi.org/10.1016/j.apsusc.2022.152502
IF: 6.7
2022-05-01
Applied Surface Science
Abstract:In this work, ultrawide bandgap ɛ-Ga2O3/h-BCN heterojunctions were epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). This heterojunction was systematically studied by various material characterization techniques, including X-ray diffraction (XRD), atomic force microscope (AFM), transmission electron microscopy (TEM), high-resolution X-ray photoelectron spectroscopy (HR-XPS), energy dispersive spectroscopy (EDS), and UV–Vis-NIR spectroscopy. h-BCN conformed to a two-dimensional layered structure, while ɛ-Ga2O3 grown on h-BCN was found to be polycrystalline. TEM and EDS element mapping showed a clear and sharp interface of the heterojunction. HR-XPS measurements were carried out to unveil the band alignment of the ε-Ga2O3/h-BCN heterojunction. It was found that the ε-Ga2O3/h-BCN heterojunction exhibits a type-II band alignment with a conduction band offset of 2.77 eV and a valence band offset of − 1.60 eV. This work provides valuable information on the epitaxial growth and band alignment of the ultrawide bandgap ɛ-Ga2O3/h-BCN heterojunctions, opening the door to a myriad of electronic and photonic applications.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films