Vertically Stacked GaN/WX2 (X = S, Se, Te) Heterostructures for Photocatalysts and Photoelectronic Devices

Dahua Ren,Yunhai Li,Wenqi Xiong

DOI: https://doi.org/10.1039/d1ra07308g

IF: 4.036

2021-01-01

RSC Advances

Abstract:(a) Absorption spectrum of GaN/WX2 (X = S, Se, Te) heterostructures. (b) Schematic plot of the migration of photogenerated electrons and holes at the GaN/WS2 interface. (c) Band-edge alignments of GaN/WX2 heterostructures.

What problem does this paper attempt to address?

Fast Fabrication of WS2/Bi2Se3 Heterostructures for High-Performance Photodetection

Fan Li,Jialin Li,Junsheng Zheng,Yuanbiao Tong,Huanfeng Zhu,Pan Wang,Linjun Li

DOI: https://doi.org/10.1021/acsami.2c17513

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic applications. A portable, fast, and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half wet poly(dimethylsiloxane) (PDMS) transfer process utilizing the change of adhesion energy with the help of micron-sized water droplets. Using this method, a vertical stacking of the WS2/Bi2Se3 heterostructure with a straddling band configuration is successfully assembled on a fluorophlogopite substrate. Thanks to the complementary band gaps and high efficiency of interfacial charge transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.
Heterostructures Stacked with X2SY (X=In, Ga; Y=Se, Te) and g-C2N Monolayers for High Power Conversion Efficiency Solar Cells: Insight from Electronic Properties and Nonadiabatic Dynamics

Xue-Qing Wan,Chuan-Lu Yang,Xiaohu Li,Yuliang Liu,Wenkai Zhao

DOI: https://doi.org/10.1039/d4ta01263a

IF: 11.9

2024-05-24

Journal of Materials Chemistry A

Abstract:Three heterostructures stacked with the Janus group-III chalcogenide (X2SY; X=In, Ga and Y=Se, Te) and the g-C2N monolayers are screened for solar cells based on the calculated electronic properties, optical absorption, the power conversion efficiency, and nonadiabatic molecular dynamics (NAMD) simulations. A total number of 114 different configurations of 14 heterostructures from the various stacking models of X2SY and g-C2N monolayers are considered. The power conversion efficiencies of the Ga2STe/In2STe, g-C2N/Ga2STe, and g-C2N/In2STe heterostructures with optimal stacking patterns are 14.06%, 10.01%, and 11.30%, respectively. Moreover, the power conversion efficiency of Ga2STe/In2STe can be promoted to 20.79% under the -4% compressive biaxial strain. The NAMD results demonstrate that all three heterostructures have a short interlayer carrier transfer time and a long electron-hole recombination time, which supports the high efficiency of carrier utilization in these heterostructures. Moreover, the longtime electron-hole recombination process and short time in the electron/hole transfer process for g-C2N/In2STe are favorable for achieving a high power conversion efficiency. Therefore, this heterostructure is a promising material in applications of solar cells.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Strain-Modulated Photocatalytic Performance of Janus WSSe/g-GaN Heterostructures

Yang Shen,Qianglong Fang,Dongyang Liu,Hua Zhu,Xiaodong Yang,Zhengming Zong,Mingxia Gao

DOI: https://doi.org/10.1021/acs.jpcc.2c08507

2023-01-01

Abstract:The construction of two-dimensional heterostructures is widely used in emerging electronic devices owing to their novel optoelectronic properties. Herein, we design g-GaN/WSSe heterostructures and explore their novel optoelectronic properties using the first-principles calculation method. Calculations reveal that the g-GaN/WSSe heterostructure in the S-atomic layer exhibits a distinct type-II band alignment. The electrostatic potential of WSSe is lower than that of the g-GaN monolayer, resulting in the development of a polarized field between the interface, thereby promoting the photogenerated electrons and holes to migrate. Interestingly, the band structure of the g-GaN/WSSe heterostructure can be modulated from a direct band gap to an indirect band gap by reducing the interlayer distance and biaxial tensile strain, which hinders the photoelectron transformation. Furthermore, the decrease of interlayer distance and tensile biaxial strain will significantly enhance the absorption capacity in the visible range. Anyhow, the above calculation results indicate the broad application prospects for g-GaN/WSSe heterostructures in solar energy utilization.
The adjustable electronic and photoelectric properties of the WS2/WSe2 and WSe2/WTe2 van der Waals heterostructures

Kangwei Cen,Shenlang Yan,Ning Yang,Xiansheng Dong,Luzhen Xie,Mengqiu Long,Tong Chen

DOI: https://doi.org/10.1016/j.vacuum.2023.112020

IF: 4

2023-06-01

Vacuum

Abstract:The two-dimensional (2D) transition metal dichalcogenides (TMDs) have interesting physical properties and potential applications in the field of electronics and nanophotonics. The structure, electronic, optical and photoelectric properties of WX2 (X = S, Se, Te) monolayer and their heterostructures are studied by the first principles calculation. The results show that the six different stacked structures of the WS2/WSe2 and WSe2/WTe2 heterostructures have very small and negligible effects on their electronic properties. The electronic properties of the WS2/WSe2 and WSe2/WTe2 heterostructures can be effectively regulated by biaxial strain, such as the transition from the direct bandgap semiconductor to the indirect band gap and then to the metallic property. The WS2/WSe2 and WSe2/WTe2 heterostructures are type-II band alignments, which are suitable for optoelectronic applications. Moreover, both tensile strain and compressive strain can effectively regulate the optical properties of WS2/WSe2 heterostructure, such as the peak and range of optical absorption coefficient. These good optical properties are conducive to the application of the WS2/WSe2 heterostructures in optoelectronic devices. Therefore, the photoelectric characteristics of three kinds of photoelectric devices for zigzag and armchair types (Z-type and A-type) based on the WS2/WSe2 heterostructures are studied, named PIN-junction, PIP-junction and NIN-junction photoelectric devices. The WS2/WSe2 heterostructure shows high anisotropy in the optoelectronic properties in the Z-type and A-type directions. The photoelectric properties of the A-type WS2/WSe2 heterostructure are better than those of the Z-type. The A-type WS2/WSe2 heterostructure has a higher photocurrent density under the AM1.5 standard. Our results suggest that the WS2/WSe2 and WSe2/WTe2 heterostructures are possible to make photodetector, and the strain can regulate the electronic and optical properties of the heterostructures, which have potential applications in photoelectric and other fields.

materials science, multidisciplinary,physics, applied
First principles study of electronic and optical properties and photocatalytic performance of GaN-SiS van der Waals heterostructure

S S Ullah,M Farooq,H U Din,Q Alam,M Idrees,M Bilal,B Amin

DOI: https://doi.org/10.1039/d1ra06011b

2021-10-07

Abstract:The vertical stacking of two-dimensional materials via van der Waals (vdW) interaction is a promising technique for tailoring the physical properties and fabricating potential devices to be applied in the emerging fields of materials science and nanotechnology. The structural, electronic and optical properties and photocatalytic performance of a GaN-SiS vdW heterostructure were explored using first principles calculations. The most stable stacking configuration found energetically stable, possesses a direct staggered band gap, which is crucial for separating photogenerated charged carriers in different constituents and is efficacious for solar cells. Further, the charge transfer occurred from the SiS to GaN layer, indicating that SiS exhibits p-type doping in the GaN-SiS heterobilayer. Interestingly, a systematic red-shift was observed in the optical absorption spectra of the understudy heterobilayer system. Moreover, the conduction band edge and valence band edge of the monolayers and corresponding heterostructure were located above and below the standard redox potentials for photocatalytic water splitting, making these systems promising for water dissociation for hydrogen fuel production. The results provide a route to design the GaN-SiS vdW heterostructure for the practical realization of next-generation light detection and energy harvesting devices.
GeC/GaN vdW Heterojunctions: A Promising Photocatalyst for Overall Water Splitting and Solar Energy Conversion

Ping Lou,Jin Yong Lee

DOI: https://doi.org/10.1021/acsami.9b20175

2020-03-25

Abstract:Two-dimensional van der Waals (vdW) heterojunctions have been regarded as promising candidates for photocatalytic water splitting and solar energy conversion. Here, we propose a two-dimensional GeC/GaN vdW heterostructure, where the GaN monolayer and the GeC monolayer are stacked. The binding energy, phonon spectrum, and elastic constants demonstrate this material's high dynamic and mechanical stability. Most notably, the GW band structure, GW + Bethe-Salpeter equation (BSE) optical absorption spectrum, and the band alignment of the density functional theory (DFT) scheme and empirical formula reveal that the GeC/GaN vdW heterostructures have a dramatically high optical absorption coefficient (∼105 cm-1) in the visible region and a suitable band edge with sufficiently large kinetic overpotentials of the hydrogen evolution reaction (ΔEc ≥ 1.945 eV) and the oxygen evolution reaction (ΔEv ≥ 1.244 eV). Photogenerated electrons and holes aggregate on the GeC monolayer and GaN monolayer surfaces, respectively, which could make this heterojunction a promising candidate for photocatalytic water splitting and solar energy conversion.
Vertical WSe2/BP/MoS2 heterostructures with tunneling behaviors and photodetection

Fan Wu,Zheng-Qiang Zhu,He Tian,Zhaoyi Yan,Yanming Liu,Yang Xu,Chao-Yang Xing,Tian-ling Ren

DOI: https://doi.org/10.1063/5.0119888

IF: 4

2022-09-18

Applied Physics Letters

Abstract:Van der Waals heterostructures show potential in electronic and optoelectronic devices. However, most heterostructures were formed based on the combination of two kinds two-dimensional (2D) materials. It is interesting to investigate the heterostructures of three kinds of 2D materials with unique band structure for photodetection and tunneling. In this work, vertical stacked WSe 2 /black phosphorus (BP)/MoS 2 heterostructure has been made. By tuning the middle layer BP thickness from thin to thick, the device can be regarded as tunneling transistor and photodetector. Throughout thin BP (9 nm) sandwiched, tunneling transistor is realized in WSe 2 /BP/MoS 2 heterojunction with a high ∼μA level tunneling current. Temperature dependent electrical characteristics proved tunneling mechanism. Throughout thicker BP (20–30 nm) flake sandwiched, high-performance photodetector can be achieved. The large bandgap of WSe 2 and MoS 2 can further reduce the dark current to ∼10 pA level at 3.0 V drain–source bias. Moreover, the unique band alignment facilitates the photo-electrons flow and blocked photo-holes in the BP channel. The photoresponsivity can reach 1.43 A/W at near infrared light with λ = 1342 nm. Our work suggests an effective scheme to design high performance electronic and optoelectronic devices assembled by 2D materials.

physics, applied
GaS:WS 2 Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths

Yang Lu,Tongxin Chen,Nhlakanipho Mkhize,Ren-Jie Chang,Yuewen Sheng,Philip Holdway,Harish Bhaskaran,Jamie H. Warner

DOI: https://doi.org/10.1021/acsnano.1c06587

IF: 17.1

2021-12-03

ACS Nano

Abstract:Two-dimensional (2D) photodetectors based on photovoltaic effect or photogating effect can hardly achieve both high photoresponsivity and large linear dynamic range at the same time, which greatly limits many practical applications such as imaging sensors. Here, the conductive-sensitizer strategy, a general design for improving photoresponsivity and linear dynamic range in 2D photodetectors is provided and experimentally demonstrated on vertically stacked bilayer WS2/GaS0.87 under a parallel circuit mode. Owing to successful band alignment engineering, the isotype type-II heterojunction enables efficient charge carrier transfer from WS2, the high-mobility sensitizer, to GaS0.87, the low-mobility channel, under illumination from a broad visible spectrum. The transferred electron charges introduce a reverse electric field which efficiently lowers the band offset between the two materials, facilitating a transition from low-mobility photocarrier transport to high-mobility photocarrier transport with increasing illumination power. We achieved a large linear dynamic range of 73 dB as well as a high and constant photoresponsivity of 13 A/W under green light. X-ray photoelectron spectroscopy, cathodoluminescence, and Kelvin probe force microscopy further identify the key role of defects in monolayer GaS0.87 in engineering the band alignment with monolayer WS2. This work proposes a design route based on band and interface modulation for improving performance of 2D photodetectors and provides deep insights into the important role of strong interlayer coupling in offering heterostructures with desired properties and functions.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures

Packiyaraj Perumal,Chelladurai Karuppiah,Wei-Cheng Liao,Yi-Rou Liou,Yu-Ming Liao,Yang-Fang Chen

DOI: https://doi.org/10.1038/s41598-017-09998-1

IF: 4.6

2017-08-30

Scientific Reports

Abstract:Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO2/n-MoS2/Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW−1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 1010 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

multidisciplinary sciences
First-principles investigations of structural, electronic and optical properties of janus GaXY (X/Y S, Se, Te)/GeAs van der Waals heterostructures for photovoltaic applications

Ziani Hanan,Marjaoui Adil,El Harouny El Hassan,Assiouan Kamal,Bouchrit Abir,El Hadri Mustapha,Baida Hatim,Ben Abdelouahab Farid,Zanouni Mohamed

DOI: https://doi.org/10.1016/j.physb.2024.415728

2024-04-01

Abstract:In this study, the investigation of the structural, electronic and optical properties of Janus monolayers GaXY (X/YS, Se, Te)/GeAs van der Waals (vdW) heterostructureshas been conducted via the use of Density Functional Theory (DFT). Two different models (I and II) have been employed, each including two stacking configurations (AA and AB). The direct band gaps observed in the GaSeTe/GeAs, GaSeS/GeAs, and GaSTe/GeAs, systems are measured to be 1.49, 1.77, and 1.41, respectively. Furthermore, the negative binding energies indicate that monolayers in both models exhibit a state of energy stability. Furthermore, all van der Waals (vdW) heterostructures demonstrate lower effective masses, a crucial factor ensuring high carrier mobilities. This characteristic is pivotal as it improves the efficiency of solar cells by facilitating enhanced charge transport. The optical properties of the GaXY (X/YS, Se, Te)/GeAs van der Waals heterostructures were investigated, revealing a significant absorption coefficient in the visible region, indicating their strong capacity to absorb visible light. These findings indicate that the GaXY (X/YS, Se, Te)/GeAs systems exhibit favorable properties that have potential for applications in optoelectronics and photovoltaics (PV).

physics, condensed matter
Tunable properties of WTe2/GaS heterojunction and Se-doped WTe2/GaS heterojunction

Yue Sun,Lijun Luan,Jiaheng Zhao,Yan Zhang,Xing Wei,Jibin Fan,Lei Ni,Chen Liu,Yun Yang,Jian Liu,Ye Tian,Li Duan

DOI: https://doi.org/10.1016/j.mssp.2023.107695

IF: 4.1

2023-11-01

Materials Science in Semiconductor Processing

Abstract:In this paper, geometric properties, electronic natures and optical natures of undoped WTe2/GaS heterojunction and Se atom doped WTe2/GaS heterojunctions are calculated using the Density Functional Theory (DFT). Three most stable heterojunction structures are obtained: A1(undoped WTe2/GaS heterojunction), B1(WTe2/GaS heterojunction with one S atom replaced by one Se atom), and C1(WTe2/GaS heterojunction with one Te atom replaced by one Se atom). By calculating the electronic properties of the heterojunctions, it is concluded that WTe2/GaS heterojunctions of type A1, B1 and C1 are Type-Ⅰ band alignments. When the strength of the external positive electric field is greater than 0.2 V / Å and the compressive stress is greater than 1%, the three kinds of WTe2/GaS heterojunctions become Type-Ⅱ band alignments. Type-Ⅱ band aligns heterojunction is conducive to the separation of photoelectron and hole, and has a wider application. The optical properties of the WTe2 monolayer, the GaS monolayer and three kinds of WTe2/GaS heterojunctions are studied. It is found that the optical absorption coefficients of the three heterojunctions have a slight difference, and the optical absorption coefficients of the WTe2/GaS heterojunctions are higher than those of the two monolayers, indicating that the heterojunctions are more suitable for the production of optoelectronic devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Intriguing optoelectronic and visible-light activated photocatalytic properties of 2D AlN/GaN and TMDCs (MX2; M = Mo/W, X = S/Se) monolayers and their bilayer vdWs heterostructures

Aqsa Abid,Bo Li,Muhammad Haneef,Attaur Rahman,Yasser Elmasry

DOI: https://doi.org/10.1140/epjp/s13360-024-05814-8

2024-11-27

The European Physical Journal Plus

Abstract:First-principles calculations reveal that 2D Group III–V binary compounds (AlN/GaN) and TMDCs (MX 2 ; M = Mo/W and X = S/Se) exhibit stable novel bilayer van der Waals (vdWs) heterostructures, with the AA-stacking pattern being the most stable. These direct band gap semiconductors have energies ranging from 1.45 to 2.96 eV, and their band gap nature enhances charge carrier mobility, which is beneficial for nanoelectronics. The p -orbital of AlN/GaN and d -orbital of TMDCs primarily contribute to the formation of conduction and valence bands, respectively. All vdWs heterobilayers show a type-II band alignment, ideal for light harvesting and detection. Bader population analysis confirms interlayer charge transfer, and the materials demonstrate strong light absorption, which is attributed to their robust quantum and dielectric confinement. MoS 2 and MoSe 2 notably exhibit a blue shift in their absorption spectra. Furthermore, these heterobilayers have promising photocatalytic properties for water dissociation, with band edge potentials computed for a pH range from 0 to 7, showing changes in the conduction and valence bands with varying pH levels.

physics, multidisciplinary
A first principles study of structural and optoelectronic properties and photocatalytic performance of GeC-MX2 (M = Mo and W; X = S and Se) van der Waals heterostructures

Tahir Wahab,Yun Wang,Antonio Cammarata

DOI: https://doi.org/10.1039/d3cp00398a

2023-04-26

Abstract:Two-dimensional (2D) materials have received enormous attention as photocatalysts for hydrogen production to address the worldwide energy crisis. In this study, we employed first-principles computations to systematically investigate the structural, opto-electronic, and photocatalytic properties of novel GeC-MX2 (M = Mo, W, X = S, Se) van der Waals (vdW) heterostructures for photocatalysis applications. Our results reveal that the GeC-MX2 heterostructures can absorb visible light. The type-II band alignment in GeC-MoS2 and GeC-WS2 enables the photogenerated electron-hole pairs to be separated continuously. The electron transfer from the GeC monolayer to MX2 monolayer leads to a large built-in electric field at the interface. This induced electric field is essential for preventing the recombination of photogenerated charges. Moreover, the band-edge locations suggest that GeC-MX2 heterostructures can be utilized as a photocatalyst for water splitting. Finally, the opto-electronic properties of these novel GeC-MX2 heterostructures facilitate their practical utilization in future photocatalysis applications.
Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures.

Xudan Zhu,Weiming Liu,Chuanxiang Sheng,Chunxiao Cong,Xin Chen,Hongyu Tang,Yi Luo,Shaojuan Li,Junhao Chu,Rongjun Zhang

DOI: https://doi.org/10.1021/acsami.3c17016

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:Recently, various transition metal dichalcogenides (TMDs)/Ga2O3 heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting various merits such as broadband optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential for flexibility. In this work, vertically stacked MoSe2/Ga2O3, WS2/Ga2O3, and WSe2/Ga2O3 heterostructures were experimentally synthesized, all exhibiting broadband light absorption, spanning at least from 200 to 800 nm. The absorption coefficients of these TMDs/Ga2O3 heterostructures are significantly improved compared to those of individual Ga2O3 films. The superior performance can be attributed to the type-I band alignment and efficient interlayer carrier transfer, which result from various band offsets along with the different doping conditions of the TMD layers, leading to distinct photoluminescence (PL) emission properties. Through a detailed analysis of the excitation-power-dependent PL spectra, we offer an in-depth discussion of the interlayer carrier transfer mechanism in the TMDs/Ga2O3 heterostructures. Regarding interlayer coupling effects, the shift of the EF of TMD layers plays a crucial role in modulating their trion emission properties. These findings suggest that these three TMDs/Ga2O3 heterostructures have great potential in broadband photodetection, and our in-depth physical mechanism analysis lays a solid foundation for a new device design.
Two-dimensional Van der Waals heterostructures based chalcogenide for photovoltaic applications: a DFT study

Smahane Dahbi,Hamid M. Ghaithan,Muath Alkadi,Abdullah Ahmed Ali Ahmed,Saif M. H. Qaid

DOI: https://doi.org/10.1007/s11082-023-06114-8

IF: 3

2024-01-31

Optical and Quantum Electronics

Abstract:In this paper, structural, electronic properties, optical spectra, stability, as well as the quantum efficiency of bulk, monolayer and two different stacking heterostructure configurations (XY 2 /XY 2 ) of dichalcogenide compounds XY 2 (where X = Mo or W and Y = S or Se) were performed using density functional technique. Our findings reveal the strong chemical bonds and high interlayer banding energy for MoSe 2 /WSe 2 heterostructure of configuration-2, which confirms its stability and its feasibility for synthesizing. Besides, the elastic stiffness coefficients demonstrate all studied heterostructures are mechanically stable at ambient pressure, this means that the studied heterostructures are harder to separate their components, making them more durable and less reactive under certain conditions, especially MoSe 2 /WSe 2 heterostructure-configuration 2. Otherwise, the electronic band structure highlights an indirect semiconductor behavior for bulk XY 2. In contrast, a strong ionic bonding between the chalcogen and metal atoms leads to the electrons confinement in the direction perpendicular to the plane revealing direct semiconductor behavior for monolayers XY 2 at Γ point. Besides, after combining two monolayers with different work functions the holes and electrons are accumulated in different layers, therefore indirect excitons have been observed for XY 2 /XY 2 heterostructures (Γ → K). Furthermore, due to the presence of the type-II band alignment, the optical absorbance spectra proves that the absorbance is enhanced along both x and z directions for all investigated heterostructures. In addition, the MoSe 2 /WSe 2 heterostructure of configuration-2, has about 65% of photons converted into usable electrical power, while 35% of photons are lost as heat and/or reflected. Finely, its high stability, its suitable forbidden band, its high visible light absorption, as well as its high quantum efficiency make the 2D Van der Waals MoSe 2 /WSe 2 heterostructure-configuration-2 as new potential candidate for upcoming nano-electronic, photovoltaic and optoelectronic devices.

engineering, electrical & electronic,optics,quantum science & technology
Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Xiang Yuan,Lei Tang,Shanshan Liu,Peng Wang,Zhigang Chen,Cheng Zhang,Yanwen Liu,Weiyi Wang,Yichao Zou,Cong Liu,Nan Guo,Jin Zou,Peng Zhou,Weida Hu,Faxian Xiu

DOI: https://doi.org/10.48550/arXiv.1601.02317

2016-01-11

Mesoscale and Nanoscale Physics

Abstract:Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.
Theoretical design of BAs/WX 2 (X = S, Se) heterostructures for high-performance photovoltaic applications from DFT calculations

Yue Guan,Xiaodan Li,Qingmiao Hu,Dandan Zhao,Lin Zhang

DOI: https://doi.org/10.1016/j.apsusc.2022.153865

IF: 6.7

2022-06-13

Applied Surface Science

Abstract:In this paper, based on first principle calculations, we systematically investigate thermal, mechanical, electronic and optical properties of heterostructures composed of boron arsenide (BAs) and WX 2 (X = S, Se). The binding energy (289.7 meV and 484.6 meV for BAs/WS 2 and BAs/WSe 2 , respectively), phonon spectra, molecular dynamics and elastic deformation resistance indicate that the heterostructures are structurally, dynamically, and mechanically stable. The investigated van der Waals (vdWs) heterostructures (BAs/WS 2 and BAs/WSe 2 ) are all direct bandgap (0.6 eV and 0.7 eV, respectively) semiconductors, where the BAs/WS 2 vdWs heterostructure possesses a type-II band alignment, which promotes the separation of photogenerated carriers and prolong their lifetime significantly. The BAs/WSe 2 vdWs heterostructure exhibits a type-I band alignment, which in turn facilitates the rapid recombination of photogenerated carriers. Both BAs/WS 2 and BAs/WSe 2 heterostructures possess high carrier mobility (10 2 ∼ 10 3 cm2/Vs ) and optical absorptivity (∼10 5 cm −1 ) in a wide range from ultraviolet to visible light region, making them highly efficient for solar energy. The band structures and carrier mobilities of BAs/WX 2 heterostructures are significantly affected by the spin–orbit coupling (SOC) effect. In addition, the external electric field can tailor the band structures including the transition between the direct and the indirect band gaps and the evolution between the type-I and type-II band alignments. The theoretical predictions suggest that BAs/WX 2 heterostructures are promising candidates for future nanoelectronics and optoelectronic devices, providing some valuable information for future experimental research.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors

Eli Sutter,Kim Kisslinger,Raymond R Unocic,Kory Burns,Jordan Hachtel,Peter Sutter

DOI: https://doi.org/10.1002/smll.202307372

IF: 13.3

Small

Abstract:Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk-like electronic properties, enhanced optical thickness, and vertical interfaces enabling in-plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near-infrared range both in uniform flakes and single-interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS-GeS1-xSex-GeSe-GeS1-xSex heterostructures with a GeS1-xSex active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy-dispersive X-ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer-scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron-hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS1- xSex) part of the heterostructure.
Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga 2 O 3 Hybrid-Dimensional Heterostructures

Xudan Zhu,Weiming Liu,Chuanxiang Sheng,Chunxiao Cong,Xin Chen,Hongyu Tang,Yi Luo,Shaojuan Li,Junhao Chu,Rongjun Zhang

DOI: https://doi.org/10.1021/acsami.3c17016

IF: 9.5

2024-03-15

ACS Applied Materials & Interfaces

Abstract:Recently, various transition metal dichalcogenides (TMDs)/Ga(2)O(3) heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting various merits such as broadband optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential for flexibility. In this work, vertically stacked MoSe(2)/Ga(2)O(3), WS(2)/Ga(2)O(3), and WSe(2)/Ga(2)O(3) heterostructures were experimentally synthesized, all exhibiting...

materials science, multidisciplinary,nanoscience & nanotechnology
Gate-Tunable Rectification Inversion and Photovoltaic Detection in Graphene/Wse2 Heterostructures

Anyuan Gao,Erfu Liu,Mingsheng Long,Wei Zhou,Yiyan Wang,Tianlong Xia,Weida Hu,Baigeng Wang,Feng Miao

DOI: https://doi.org/10.1063/1.4953152

IF: 4

2016-01-01

Applied Physics Letters

Abstract:We studied electrical transport properties including gate-tunable rectification inversion and polarity inversion, in atomically thin graphene/WSe2 heterojunctions. Such engrossing characteristics are attributed to the gate tunable mismatch of Fermi levels of graphene and WSe2. Also, such atomically thin heterostructure shows excellent performances on photodetection. The responsivity of 66.2 mA W−1 (without bias voltage) and 350 A W−1 (with 1 V bias voltage) can be reached. What is more, the devices show great external quantum efficiency of 800%, high detectivity of 1013 cm Hz1/2/W, and fast response time of 30 μs. Our study reveals that vertical stacking of 2D materials has great potential for multifunctional electronic and optoelectronic device applications in the future.

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