Abstract:Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a B0.14Al0.86N/Al0.7Ga0.3N heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p(3/2) with respect to the valence band maximum of B0.14Al0.86N and Al0.7Ga0.3N layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p(3/2) core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 +/- 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 +/- 0.05 eV. The determination of the band alignment of the B0.14Al0.86N/Al0.7Ga0.3N heterojunction facilitates the design of optical and electronic devices based on such junctions.

Band Offsets of Non-Polar A-plane GaN/AlN and AlN/GaN Heterostructures Measured by X-ray Photoemission Spectroscopy

Band Alignment of AlN/β-Ga2O3 Heterojunction Interface Measured by X-Ray Photoelectron Spectroscopy

The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Band Alignment of B0.14Al0.86N/Al0.7Ga0.3N Heterojunction

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Band-Offset Non-Commutativity of Gaas/Algaas Interfaces Probed by Internal Photoemission Spectroscopy

The determination of WSe2/GaN heterojunction band offsets in the semipolar (11–22) and nonpolar (11–20) planes by x-ray photoelectron spectroscopy

Band Offsets Of Alxga1-Xas/Gaas Heterojunction From Atomistic First Principles

Offsets and polarization at strained AlN/GaN polar interfaces

Small Valence Band Offsets of Non-Polar ZnO/Zn1−Mg O Heterojunctions Measured by X-ray Photoelectron Spectroscopy

Valence Band Offset of Β-Ga2o3/wurtzite GaN Heterostructure Measured by X-ray Photoelectron Spectroscopy.

Band offset of GaAs / Al x Ga 1 2 x As heterojunctions from atomistic first principles

Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

Measurement of Zno/Al2o3 Heterojunction Band Offsets by in Situ X-Ray Photoelectron Spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Nearly-zero Valence Band and Large Conduction Band Offset at BAlN/GaN Heterointerface for Optical and Power Device Application

Valence Band Offset of InN∕AlN Heterojunctions Measured by X-Ray Photoelectron Spectroscopy

Band Offsets at the Inalgaas/Inalas (001) Heterostructures Lattice Matched to an Inp Substrate

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Valence Band Offset of N-Zno/p-mgxni1−xo Heterojunction Measured by X-Ray Photoelectron Spectroscopy