What problem does this paper attempt to address?

The problem that this paper attempts to solve is the different values of band discontinuities caused by lattice mismatch at the AlN/GaN polar interface. Specifically, the paper focuses on the valence band offsets (VBOs), interface dipoles, strain - induced piezoelectric fields, relaxed geometric structure and formation energies of the (0001) polar interfaces of AlN/GaN (AlN on GaN) and GaN/AlN (GaN on AlN). Through first - principles calculations, the paper explores these interface properties and pays special attention to the forward - backward asymmetry caused by lattice mismatch. ### Main research contents: 1. **Valence Band Offsets (VBOs)**: - The paper calculates the bulk material properties of AlN and GaN, including the energy band structure and valence band maximum (VBM), through Density Functional Theory (DFT). - By calculating the energy band structure under different strain conditions, the valence band offset is determined. 2. **Interface Dipoles**: - The paper proposes a new charge decomposition technique to overcome the difficulty in determining the valence band offset caused by the polarization field. - By superimposing the charge distributions of the two interfaces, the monopole and dipole contributions are separated, thereby accurately calculating the interface dipole moment. 3. **Strain - Induced Piezoelectric Fields**: - By calculating the macroscopic polarization of AlN and GaN under strain conditions, the influence of strain on the piezoelectric field is analyzed. 4. **Relaxed Geometric Structure**: - The geometric structure changes of the AlN/GaN interface after relaxation, including the change in bond length, are calculated. 5. **Formation Energies**: - Through the total energy calculation, the average formation energy of the AlN/GaN interface is determined. ### Research background: - Currently, there is great uncertainty in the valence band offset of the AlN/GaN interface experimentally, and there are contradictions among different experimental results. - In theoretical research, most works use the assumption of ideal lattice matching, which cannot accurately capture the influence brought by lattice mismatch. - Lattice mismatch may lead to significant forward - backward asymmetry, but this phenomenon has not been clearly confirmed experimentally. ### Research methods: - Use Density Functional Theory (DFT) for first - principles calculations. - Adopt ultrasoft pseudopotentials and plane - wave basis sets. - By constructing a supercell model of the (0001) interface, the actual interface system is simulated. - Use a new charge decomposition technique to separate the monopole and dipole contributions to accurately calculate the interface dipole moment. ### Conclusions: - The paper confirms that there is significant forward - backward asymmetry at the AlN/GaN interface, and the difference in valence band offset is 0.65 eV. - Strain and relaxation effects have an important influence on the valence band offset. - Through the new charge decomposition technique, the problem of determining the valence band offset caused by the polarization field has been successfully solved. This paper provides an important theoretical basis for understanding the electronic structure and polarization characteristics of the AlN/GaN interface.

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