Abstract:We model the quantum confined Stark effect in AlN/GaN/AlN heterostructures grown on top of [0001]-oriented GaN nanowires. The pyro- and piezoelectric field are computed in a self-consistent approach, making no assumption about the pinning of the Fermi level, but including an explicit distribution of surface states which can act as a source or trap of carriers. We show that the pyro- and piezoelectric field bends the conduction and valence bands of GaN and AlN and transfers charges from the top surface of the nanowire to an electron gas below the heterostructure. As a consequence, the Fermi level is likely pinned near the valence band of AlN at the top surface. The electron gas and surface charges screen the electric field, thereby reducing the Stark effect. The efficient strain relaxation further weakens the piezoelectric polarization. We compute the electronic properties of the heterostructures with a sp3d5s* tight-binding model, and compare the theoretical predictions with the available experimental data.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the Quantum Confined Stark Effect (QCSE) in gallium nitride (GaN) and aluminum nitride (AlN) nanowire heterostructures. Specifically, the author focuses on how the internal electric fields generated by spontaneous polarization and piezoelectric effects affect the distribution of electrons and holes in these heterostructures, and how these effects are influenced by strain relaxation and surface states. These issues are crucial for understanding the performance of these materials in optoelectronic devices. ### Main research contents: 1. **Modeling methods**: - The paper uses a self - consistent method to calculate pyroelectric and piezoelectric fields. Instead of assuming Fermi - level pinning, it explicitly considers surface states as carriers' sources or traps. - The sp3d5s* tight - binding model is used to calculate the electronic properties of the heterostructure and is compared with experimental data. 2. **Influence of internal electric fields**: - It studies how spontaneous polarization and piezoelectric effects bend the conduction and valence bands of GaN and AlN, causing charge to transfer from the top surface of the nanowire to the electron gas below the heterostructure. - It analyzes how these charges screen the internal electric fields, thereby weakening the Stark effect. 3. **Role of strain relaxation**: - Efficient strain relaxation further weakens piezoelectric polarization, thereby reducing the strength of the internal electric field. 4. **Influence of surface states**: - Surface states can act as carriers' sources or traps and have an important impact on the distribution of electric fields. The paper explores in detail how these surface states affect the pinning position of the Fermi level. 5. **Screening effect of electron gas and surface charge**: - The electron gas and surface charge reduce the influence of the Stark effect by screening the internal electric field. ### Main conclusions: - **Electric field distribution**: Spontaneous polarization and piezoelectric effects generate a strong vertical electric field in GaN/AlN heterostructures, but these fields are partially screened by the electron gas and surface charge. - **Strain relaxation**: Efficient strain relaxation significantly weakens piezoelectric polarization, thereby reducing the strength of the internal electric field. - **Surface states**: Surface states play a key role in electric field distribution. In particular, the surface states on the top surface can release electrons into the GaN pillar, thereby further screening the internal electric field. - **Electronic structure**: The energy gap energy of GaN quantum dots calculated by the tight - binding model is in good agreement with the experimental results, verifying the validity of the theoretical model. ### Experimental comparison: - The paper also compares theoretical predictions with experimental data. In particular, in GaN quantum dots and AlN barriers of different thicknesses, the calculated energy gap energy is basically consistent with the experimental measured values, further verifying the accuracy of the model. In summary, through detailed modeling and analysis of GaN/AlN nanowire heterostructures, this paper reveals the influence of internal electric fields, strain relaxation and surface states on the electronic structure and optical properties, providing an important theoretical basis for the design of high - performance nitride - based optoelectronic devices.

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