Band Offsets of Non-Polar A-plane GaN/AlN and AlN/GaN Heterostructures Measured by X-ray Photoemission Spectroscopy
Ling Sang,Qin Sheng Zhu,Shao Yan Yang,Gui Peng Liu,Hui Jie Li,Hong Yuan Wei,Chun Mei Jiao,Shu Man Liu,Zhan Guo Wang,Xiao Wei Zhou,Wei Mao,Yue Hao,Bo Shen
DOI: https://doi.org/10.1186/1556-276x-9-470
2014-01-01
Nanoscale Research Letters
Abstract:The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.