Abstract:Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using a priori material parameters. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs (100) single-barrier double heterostructures with AlxGa1-xAs as the model ternary III-V compounds. Electronic band gaps of the AlGaAs alloys and band offsets at the GaAs/AlGaAs (100) interfaces are measured with a resolution of several meV at 4.2 K. The direct-gap Gamma band offset ratio for the GaAs/AlGaAs (100) interface is found to be 59:41 (+/-3%). Reexamination of our previous experiment [W. Yi et al., Appl. Phys. Lett. 95, 112102 (2009)] revealed that, in the indirect-gap regime, ballistic electrons from direct tunnel emissions probe the X valley in the conduction band, while those from Auger-like scattering processes in the metal base film probe the higher-lying L valley. Such selective electron collection may be explained by their different momentum distributions and parallel momentum conservation at the quasiepitaxial Al/GaAs (100) interface. We argue that the present method is in principle applicable to arbitrary type-I semiconductor heterostructures.

Band offset of GaAs / Al x Ga 1 2 x As heterojunctions from atomistic first principles

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Band Offsets Of Alxga1-Xas/Gaas Heterojunction From Atomistic First Principles

Band Offsets at the Inalgaas/Inalas (001) Heterostructures Lattice Matched to an Inp Substrate

First-principles Calculations of Band Offsets

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Electric fields and valence band offsets at strained [111] heterojunctions

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Band Offsets of Non-Polar A-plane GaN/AlN and AlN/GaN Heterostructures Measured by X-ray Photoemission Spectroscopy

Accurate Band Offset Prediction of Sc 2 O 3 /GaN and θ-Al 2 O 3 /GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Tunable electronic and optical properties of Type-II AlAs/GaS heterojunction: first-principles calculations

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Band offset determination of the GaAs/GaAsN interface using the DFT method

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

First-principles study of band offsets in ferromagnetic semiconductor heterojunctions

The determination of WSe2/GaN heterojunction band offsets in the semipolar (11–22) and nonpolar (11–20) planes by x-ray photoelectron spectroscopy