Abstract:The band offset between different semiconductors is an important physical quantity determining carrier transport properties near the interface in heterostructure devices. Computation of the natural band offset is a longstanding challenge. We propose an intermediate-phase method to predict the natural band offset between two structures with different symmetry, for which the superlattice model cannot be directly constructed. With this method and the intermediate phases obtained by our searching algorithm, we successfully calculate the natural band offsets for two representative systems: (i) zinc-blende CdTe and wurtzite CdS and (ii) diamond and graphite. The calculation shows that the valence band maximum (VBM) of zinc-blende CdTe lies 0.71 eV above that of wurtzite CdS, close to the result 0.76 eV obtained by the three-step method. For the natural band offset between diamond and graphite which could not be computed reliably with any superlattice methods, our calculation shows that the Fermi level of graphite lies 1.51 eV above the VBM of diamond using an intermediate phase. This method, under the assumption that the transitivity rule is valid, can be used to calculate the band offsets between any semiconductors with different symmetry on condition that the intermediate phase is reasonably designed.

First-principles Calculations of Band Offsets

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Band offset of GaAs / Al x Ga 1 2 x As heterojunctions from atomistic first principles

Band Offsets at the Inalgaas/Inalas (001) Heterostructures Lattice Matched to an Inp Substrate

Band Offsets Of Alxga1-Xas/Gaas Heterojunction From Atomistic First Principles

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Band offsets at the interfaces between $β$-Ga$_2$O$_3$ and Al$_2$O$_3$

Band offset determination of the GaAs/GaAsN interface using the DFT method

Revised Ab Initio Natural Band Offsets of All Group IV, II-VI, and III-V Semiconductors

First-principles study of band offsets in ferromagnetic semiconductor heterojunctions

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Intermediate-phase Method for Computing the Natural Band Offset Between Two Materials with Dissimilar Structures

Three-Step Approach for Computing Band Offsets and Its Application to Inorganic A B X-3 Halide Perovskites

Band offsets at the crystalline/amorphous silicon interface from first-principles

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Accurate Band Offset Prediction of Sc 2 O 3 /GaN and θ-Al 2 O 3 /GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Composition dependent band offsets of ZnO and its ternary alloys