Investigation of the electronic structure of two-dimensional GaN/Zr2CO2 hetero-junction: Type-II band alignment with tunable bandgap
Xue Ting Zhu,Ying Xu,Yong Cao,Yu Qing Zhao,Wei Sheng,Guo-Zheng Nie,Zhimin Ao
DOI: https://doi.org/10.1016/j.apsusc.2020.148505
IF: 6.7
2021-03-01
Applied Surface Science
Abstract:<p>By applying first-principles calculations, we construct the GaN/Zr<sub>2</sub>CO<sub>2</sub> hetero-junction and explore its electronic structure properties. Band structure calculations indicate that GaN/Zr<sub>2</sub>CO<sub>2</sub> junction possesses type-II band alignment. The valence band maximum (VBM) is dominated by GaN and the conduction band minimum (CBM) dominated by Zr<sub>2</sub>CO<sub>2</sub>. The large binding energy and short inter-layer spacing distance suggest that there exists chemical adsorption between the two layers beyond van der Waals (vdW) interaction. Furthermore, large conduction band offset (CBO) (2.70 eV) and powerful built-in electric field (2.34 eV) indicate that the GaN/Zr<sub>2</sub>CO<sub>2</sub> hetero-junction may be an excellent candidate for the photo-electronic device or photocatalyst applications. We also investigated the influence of biaxial strain on the band structure of GaN/Zr<sub>2</sub>CO<sub>2</sub>. The bandgap of the GaN/Zr<sub>2</sub>CO<sub>2</sub> hetero-junction can be tailored by biaxial strain effectively. Especially, the bandgap closes up at the compressive strain of -5%, Our calculations demonstrate that the GaN/Zr<sub>2</sub>CO<sub>2</sub> hetero-junction is promising for tunable high-performance optoelectronic nanodevices.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films