Abstract:Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $\beta$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $\beta$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $\beta$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$\beta$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$\beta$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $\beta$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$\beta$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructures.

First-principles study of band offsets in ferromagnetic semiconductor heterojunctions

Electric fields and valence band offsets at strained [111] heterojunctions

First Principles Study on the Interface of CrSb∕GaSb Heterojunction

Band Offsets Of Alxga1-Xas/Gaas Heterojunction From Atomistic First Principles

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Band-Offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe Interfaces

First-principles calculation of the band offset at BaO/BaTiO$_3$ and SrO/SrTiO$_3$ interfaces

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Band offsets at the crystalline/amorphous silicon interface from first-principles

Band alignment at metal/ferroelectric interfaces: Insights and artifacts from first principles

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Band offset of GaAs / Al x Ga 1 2 x As heterojunctions from atomistic first principles

First-principles Computational Exploration of Ferromagnetism in Monolayer GaS Via Substitutional Doping.

Controllable band offset in monolayer MoSe2 driven by surface termination and ferroelectric field of BiFeO3(0001) substrate

The Band Offset at CdS/Cu 2 ZnSnS 4 Heterojunction Interface

Excellent spin diode and spin-dependent Seebeck effects in hetero-junctions based on ferromagnetic Cr 3 M 4 (M = Se, Te)

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

The Interface Electronic States and Valence Band Offsets of the Si/GaP Heterojunction