Abstract:The structural and electronic properties of the wurtzite phase of the InAs and GaAs compounds are, for the first time, studied within the framework of Density Functional Theory (DFT). We used the full-potential linearized augmented plane wave (LAPW) method and the local density approximation (LDA) for exchange and correlation and compared the results to the corresponding pseudopotential calculations. From the structural optimization of the wurtzite polymorph of InAs we found that the c/a ratio is somewhat greater than the ideal one and that the internal parameter u/c has a value slightly smaller than the ideal one. In the all-electron approach the wurtzite polymorph has a smaller equilibrium volume per InAs pair and a higher binding energy when compared to the zinc-blende phase whereas the situation is reversed in the pseudo treatment. The energy differences are, however, smaller than the accuracy of standard density-functional codes (~30 meV) and a theoretical prediction of the relative stability of the two phases cannot be made. In order to investigate the possibility of using an LDA calculation as a starting point for many-body calculations of excitations properties, we here also present the band-structures of these materials. The bands are calculated with and without relativistic effects. In InAs we find that the energy gaps of both polymorphs are positive when obtained from a non-relativistic calculation and negative otherwise. For both semiconductors, we determine the spin-orbit splittings for the zinc-blende and the wurtzite phases as well as the crystal-field splittings for the new wurtzite polymorphs.

First principles calculations on theoretical band gap improvement of IIIA-VA zinc-blende semiconductor InAs

Structural, Electronic and Elastic Properties of zincblende III-Arsenide Binary Compounds: First-Principles Study

The high-pressure phase transitions and vibrational properties of zinc-blende XTe (X = Zn, Cd, Hg): Performance of local-density-approximation density functional theory

First-principle Calculations of the Structure and Elastic Properties of GaAs under Pressure

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

First principles study on structural, phase transition and electronic structure of Zinc Sulfide (ZnS) within LDA, GGA and mBJ potential

All-electron study of InAs and GaAs wurtzite: structural and electronic properties

Electronic Structure of III-V Zinc-Blende Semiconductors from First Principles

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Application of k . p method on band structure of GaAs obtained through joint density functional theory

First-principles calculation of structural, electronic, and optical properties of zinc-blende AlxGa1-xN alloys

Band parameters for III–V compound semiconductors and their alloys

Band-Gap Corrected Density Functional Theory Calculations For Inas/Gasb Type Ii Superlattices

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

First principles calculation of electronic properties and effective mass of zinc-blende GaN

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

Effects of ordering on the band structure of III–V semiconductors