Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Lattice dynamics of wurtzite semiconductors gan and a1n

Lattice Dynamics of Wurtzite Semiconductors Gan and Aln

Lattice dynamics of zinc-blende GaN and AIN: II. Superlattice phonons

Structural and Thermodynamic Properties of Gallium Arsenide with Hexagonal Wurtzite Structure from First-Principles Analysis

Lattice Dynamics of Gan/Aln Superlattices

Lattice Dynamics of Zinc-Blende GaN and AlN: I. Bulk Phonons

A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN superlattices

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Electronic and optical properties of wurtzite GaN: A theoretical approach

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Zone-center Optical Phonons in Wurtzite GaN and AlN

Polaronic Self-Trapped Energy and Effective Mass of A Cylindrical Wurtzite Gan Nanowire

Lattice-Dynamics of A3c60 Fullerides, Where the A Are Alkali-Metal Elements

Polar quasi-confined optical phonon modes in wurtzite quasi-one-dimensional GaN/AlxGa1-xN quantum well wires

Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter’s Model

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation

A theoretical study of electronic and optical properties in wurtzite GaN

Polar Interface-Optical Vibrational Spectra in A Wurtzite Gan/Aln Rectangular Quantum Wire

All-electron study of InAs and GaAs wurtzite: structural and electronic properties