Abstract:The synergistic effects between total ionizing dose (TID) and transient dose rate (TDR) effects are explored. To implement the analysis, a stable 3D parallel numerical scheme is specially developed. Using the control volume finite element tearing and interconnect (CV-FETI) method, the discontinuous boundary conditions can be included with the usual numerical properties. Newton's method is employed to overcome the nonconvergence brought by the nonlinear property of the drift- diffusion model. Compared to with the commercial COMSOL Multiphysics software, our CV-FETIM shows strong numerical stability on unstructured meshes. The proposed method is validated by comparing the numerical results with those calculated using commercial software. Then, this new solver is applied to simulate MOSFET, STI-based LDMOSFET, and FinFET. By adjusting the dose rate, oxide traps, and interface traps, the independent TID, independent TDR, and TID-TDR synergistic effects are investigated. On picosecond or nanosecond timescales, the duration, amplitude, and decline rate of the radiation-induced photocurrent are studied. Moreover, the influence of interface traps on different surfaces is compared. The numerical results indicated that the developed numerical scheme possesses good stability, accuracy, and applicability.

Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor

Numerical investigation on thermal characteristics of BJTs under the impact of an EMP

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Transient Response of Bipolar Junction Transistor under Intense Electromagnetic Pulse

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Effects of High Power Electromagnetic Pulse Injected from Base on Bipolar Junction Transistor

Simultaneous and Sequential Radiation Effects on Npn Transistors Induced by Protons and Electrons

Thermal Accumulation Effects on the Transient Temperature Responses in LDMOSFETs Under the Impact of a Periodic Electromagnetic Pulse

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Damage of Bipolar Junction Transistor under Electromagnetic Pulse Injected from Different Electrode

Synergistic radiation effects on PNP transistors caused by protons and electrons

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Bias Dependence of Synergistic Radiation Effects Induced by Electrons and Protons on Silicon Bipolar Junction Transistors

Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Combined Radiation Effects of Protons and Electrons on NPN Transistors

Combined effect of total ionizing dose and electromagnetic pulse on MOSFET devices

Influence of Circuit During Injection of EMP into Bipolar Junction Transitor

The Influence of Bias Conditions on Ionizing Radiation Damage of NPN and PNP Transistors?

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors