Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Entire Bias Space Statistical Reliability Simulation by 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs Based Circuits

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

A Unified Approach For Trap-Aware Device/Circuit Co-Design In Nanoscale Cmos Technology

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets

Simulation Methods of Multi-physics Effects in Nano-scale CMOS

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo

Multi-physics Simulations for Nanoscale CMOS Reliability

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding Based on Complete 4-State Trap Model

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method