Abstract:It is well-known that both Performance and reliability of present-day RF integrated circuits (RFICs & MMICs) and even Nano electronic devices cannot be completely understood or accurately predicted from electromagnetic considerations alone. For example, the performance parameters, such as S-parameters, power handling capability and breakdown thresholds of high-density nano interconnects and RF modules are often affected by heat conduction and mechanical stresses/deformations, in extreme cases leading to electro-thermo-mechanical breakdown. Under such circumstances, predictive simulations must rely on multiphysics computational approaches as opposed to electromagnetics-only methods. There exist many challenges in developing computational algorithms for rapidly and accurately analyzing electro-thermal and electro-thermo-mechanical phenomena in RF as well as nano electronic components and circuits with complex geometries and new material properties. Most material parameters involved, such as carrier mobility, permittivity, permeability, electrical conductivity, thermal conductivity, and thermal expansion coefficients are applied field, temperature, and thermal stress dependent. On the other hand, there exist significant differences in length and time scales among electrical, thermal, and mechanical field actions. Therefore, special attention must be paid to the choice of spatial discretization and time stepping procedures to ensure convergent multiphysics solutions. This talk will address challenges and opportunities in computational multiphysics method and its application for RF and Nano electronics, with a series of examples given and demonstrated for the capability of time-domain finite element method and its implementation.

Simulation Methods of Multi-physics Effects in Nano-scale CMOS

Multi-physics Simulations for Nanoscale CMOS Reliability

Computational Multiphysics Method for Rf and Nano Electronics: Challenges and Opportunities

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Computational Analysis of Mechanical and Electromigration Reliability Problems

Electromagnetic-Circuital-Thermal Multiphysics Simulation Method: A Review

An Efficient Domain Decomposition Method in Multi-physics Simulation of Package Systems

Numerical Simulations Of Nonlinear Current-Voltage Characteristics Of Nano-Channels: A Benchmark Study

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Modeling and Simulation of Nano-devices

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Self-heating Aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method

Device Simulation for Nanoscale MOSFET

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Simulation approach of hybrid optical-electrical on-chip interconnects for multicore systems

Multiscale modeling and simulation methods for electromagnetic and multiphysics problems

Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

Massively parallel computing in nano-VLSI interconnect modeling and lithography simulation

3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects

Multiphysics modeling and simulation of ultra-thin channel Germanium on insulator (GeOI) MOSFETs

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics