Abstract:The adverse effects of leakage currents and short channel effects (SCE) on mobility degradation in CMOS technology below the 100-nanometer scale. To mitigate these effects, the paper suggests using material engineering techniques to improve the mobility of charge carriers and control SCE effects. Specifically, the switching characteristics of a dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) are enhanced by stacking the gate with various oxide layers including SiO 2 , HfO 2 , and TiO 2 . These oxide layers possess a range of permittivity capabilities from low to high. By combining different oxide layers the proposed device aims to improve its performance. To evaluate the performance of the proposed device we have employ simulation models such as CONMOB (Concentration Dependent Mobility), AUGER (Auger Recombination), and FLMOB (Field Dependent Mobility). These techniques help to obtain the accurate and reliable simulation results. We have utilized the parameters like drain current, transconductance, electric field, I ON , I OFF , and I ON /I OFF and simulate them using the Silvaco TCAD tool. The analysis of these parameters are discussed in the paper we have highlighted the compatibility of the proposed DGMOSFET device for low-power applications. In this paper, we have focus on the improving the switching characteristics of a dual-gate MOSFET by utilizing gate stacks with various oxide layers. The proposed device is evaluated through simulations using concentration-dependent mobility, Auger recombination, and field-dependent mobility techniques. The results indicate that the device is suitable for low-power applications.

Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD

Simulation and Drain Current Performance analysis of High-K Gate Dielectric FinFET

Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Gate current modeling of high-k stack nanoscale MOSFETs

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics

Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer

Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

Characteristics of Sub-100 nm High-k Gate Dielectrics MOSFETs With Different Source / Drain Structure

Advanced CMOS Gate Stack: Present Research Progress

Design Considerations of High-Κ Gate Dielectrics for Sub-0.1-μm MOSFET's

Characterization of Sub-100nm MOSFETs with High K Gate Dielectric

Design and analysis of dual gate MOSFET with spacer engineering

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks