Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Hao Zhu,Bin Ye,Chengkang Tang,Xianghui Li,Qingqing Sun,David Wei Zhang
DOI: https://doi.org/10.1109/led.2021.3091488
IF: 4.8157
2021-01-01
IEEE Electron Device Letters
Abstract:Low-frequency noise has become one of the critical factors in ultra-scaled MOSFET devices, and is also effective as an evaluating tool in characterizing device structure and reliability. Here, the low-frequency noise in 14 nm-FinFET is studied, and its dependence on trap defects of high-k dielectric and interface is further experimentally investigated. By using NH3/N2 thermal processing in high-k/metal gate (HKMG) module, the $1/{f}$ noise characteristics have been greatly improved. The dominating mechanism is quantitatively analyzed focusing on the defect trap density in bulk HfO2 and SiO2 interface based on the carrier number fluctuation model. Moreover, the carrier mobility and the bias temperature instability property of the FinFET devices are also enhanced which further confirms the improvement in low-frequency noise upon optimized thermal processing.
What problem does this paper attempt to address?