Abstract:Materials with high dielectric constant (k) have been used in SiC-based metal–oxide–semiconductor (MOS) devices to reduce the electric field in the gate dielectric and thus suppress a high-field reliability problem. In this work, high-k gate dielectrics HfxTi1−xO2 and HfxTi1−xON are applied in SiC MOS devices and an ultrathin thermally grown SiO2 is used as an interlayer between SiC and the high-k materials to block electron injection from SiC into the low-barrier high-k materials. Incorporating nitrogen into the Hf-Ti oxide (by adding nitrogen gas during its sputtering) stacked with a SiO2 interlayer (HfxTi1−xO∕SiO2) results in a better gate dielectric for the MOS capacitor, such as smaller frequency dispersion in the capacitance-voltage curve, less oxide charges, and better interface quality. Moreover, the nitrogen incorporation increases the dielectric constant of the oxide, but causes higher dielectric leakage, which can be suppressed by the SiO2 interlayer. High-field stress under constant electric field is performed on the stacked/nonstacked Hf-Ti oxides and oxynitrides, and it turns out that the two oxynitrides show a much smaller flatband shift and a less stress-induced leakage current compared with the two oxides. Based on these results, the HfxTi1−xON∕SiO2 stack could be a promising high-k gate dielectric for SiC MOS devices with enhanced reliability.

Reliability Improvement of 28-nm High- /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Low-Frequency Noise Analysis of the Optimized Post High-k Deposition Annealing in FinFET Technology

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Improved high-field reliability for a SiC metal–oxide–semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Gate Oxide Reliability Degradation by Post Poly-Silicon Annealing and Suppression Method

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

An Oxidation-Last Annealing for Enhancing the Reliability of Indium-Gallium-zinc Oxide Thin-Film Transistors