Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the Xbti Performance in HfO2-Based FinFETs

Study on NBTI improvement of HfO<inf>2</inf>-based 14 nm P-type FinFET with post high-k deposition thermal treatment

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

Low-Frequency Noise Analysis of the Optimized Post High-k Deposition Annealing in FinFET Technology

Alleviation of Negative-Bias Temperature Instability in Si P-Finfets with ALD W Gate-Filling Metal by Annealing Process Optimization

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Fluorine IMP effect on negative bias temperature instability and process induced defects

Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device.

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Improved Positive Bias Temperature Instability of N-Type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics