Abstract:In AlGaN/GaN heterostructure field effect transistors (HFETs), two-dimensional-electron-gas (2DEG), induced by strong piezoelectric and spontaneous polarization field, has high sheet density, and can be tuned up to 5 x 10(13) cm(-2) with pure AlN barrier.[Appl. Phys. Lett. 90, 182112 (2007)].For Al compositions larger than 40%, due to the large lattice mismatch between GaN and AlGaN, strain-related issues significantly reduce the mobility for these high sheet carrier densities. Recently, using nearly lattice-matched AlInN/GaN to improve the performance of HFETs has been studied theoretically and experimentally. A high sheet density (2.42 x 10(13) cm(2)) with >1000 cm(2) Ns mobility has been reported by inserting an AlN spacer layer between the AlGaN barrier and GaN channel. However, low-temperature mobilities for AlInN/GaN HFETs are much lower than those for AlGaN/GaN HFETs. In this paper, we study the Al1-xInxN/AlN/GaN (x=0.20 - 0.12) (HFETs) grown by metalorganic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas (2DEG) density from 0.90 x 10(13) cm(-2) to 1.64 x 10(13) cm(-2) with corresponding electron mobilities of 1600 cm(2)/Vs and 1410 cm(2)/Vs. Furthermore, at 10 K, the mobility reached 17,600 cm(2) Ns with a sheet density 9.6 x 10(12) cm(-2) for the nearly lattice-matched Al0.82In0.18N /AlN/GaN heterostructure. The HFETs having 1 mu m gate length exhibited a maximum transconductance of - 250 mS/mm with good pinch-off characteristics.

A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Noise Performance In Algan/Gan Hemts Under High Drain Bias

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

InAlN‐barrier HFETs with GaN and InGaN Channels

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

Comparative study on RTN amplitude in planar and FinFET devices

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

Al X in 1-X N/GaN Heterostructure Field Effect Transistors