Abstract:1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model is for the first time introduced for single- to few- layer 2D-FETs in this study, precisely validating 1/f noise experiments for various types of devices. The proposed model mainly accounts for the measured 1/f noise bias dependence as the latter is defined by different physical mechanisms. Thus, analytical expressions are derived, valid in all regions of operation in contrast to conventional approaches available in literature so far, accounting for carrier number fluctuation (DN), mobility fluctuation (Dmu}) and contact resistance (DR) effects based on the underlying physics that rules these devices. DN mechanism due to trapping/detrapping together with an intense Coulomb scattering effect, dominates 1/f noise from medium to strong accumulation region while Dmu, is also demonstrated to modestly contribute in subthreshold region. DR can also be significant in very high carrier density. The VS induced reduction of 1/f noise measurements at high electric fields, is also remarkably captured by the model. The physical validity of the model can also assist in extracting credible conclusions when conducting comparisons between experimental data from devices with different materials or dielectrics.

Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Low frequency 1/f noise in graphene FETs

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

1/f noise spectroscopy and noise tailoring of nanoelectronic devices

Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene.

Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Review of the Low-Frequency 1/f Noise in Graphene Devices

Comparative Study of $\hbox{1}/f$ Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

Graphene field effect transistor scaling for ultra-low-noise sensors

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Low-dimensional materials-based field-effect transistors

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

1/f Noise in Thin Films of Topological Insulator Materials