Abstract:The nanoscale mapping of relativistic carrier transport behaviours in graphene should provide valuable insights about versatile charge transport mechanisms at mesoscopic levels. However, for relativistic charge carriers in graphene, direct mapping of some ultrafine effects such as electron-phonon interactions has been very difficult usually because the substrate below graphene generates rather large electrical noises. Here, we report the nanoscale mapping of relativistic charge carrier transport behaviours in graphene, including the effects of substrate-graphene lattice hybridisation, charge-traps, and phonons. In this strategy, sheet-resistances and noise-source densities ( n eff ) were quantitatively mapped in graphene hybridised with hexagonal boron nitride (hBN) at atomic levels. Depending on the extent of graphene/hBN hybridisation, we observed the formation of domains with different sheet-resistances and highly-transparent electronic boundaries. Surprisingly, sheet-resistances were largely unaffected by n eff in domains, possibly due to the relativistic nature of carriers in graphene. Additionally, in the case of double-layer graphene, similar interlayer hybridisation effect on relativistic carriers was observed with comparable sheet-resistances but rather low n eff . Notably, at specific biases, we observed sharp noise peaks generated by the intensified electron-phonon interaction. Interestingly, even with activated phononic effects, the relativistic behaviour of carriers was preserved. Since our method allowed us to map the ultrafine effects of lattice hybridisation, noise-sources, and activated phonons on relativistic carrier transport behaviours in low-noise graphene, it can have significant impacts on basic researches about charge transport and practical device applications based on graphene.

Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene.

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Low frequency 1/f noise in graphene FETs

Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Review of the Low-Frequency 1/f Noise in Graphene Devices

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Ultralow 1/f noise in epigraphene devices

Low-frequency 1/f Noise in a Graphene/silicon X-ray Detector

Low-frequency Flicker Noise in Stochastic Ionic Transport Across Atomically Thin Graphene Nanopores

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Nanoscale mapping of relativistic carrier transport behaviours in graphene on hexagonal boron nitride

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Origin of electrical noise near charge neutrality in dual gated graphene device

Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs