Abstract:Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 x 10(-9) mu m(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices.

Low-frequency 1/f Noise in a Graphene/silicon X-ray Detector

Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed from Graphene Oxide

Low frequency 1/f noise in graphene FETs

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Schottky Diode Characteristics and 1/f Noise of High Sensitivity Reduced Graphene Oxide/si Heterojunction Photodetector

Low-frequency Flicker Noise in Stochastic Ionic Transport Across Atomically Thin Graphene Nanopores

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Gate Tuning of Förster Resonance Energy Transfer in a Graphene - Quantum Dot FET Photo-Detector

Noise suppression of 0D/2D flexible photodetectors mediated with atomically thin F–C functionalization on graphene channel

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

1/F Noise in GaN/AlGaN HEMTs

Ultralow 1/f noise in epigraphene devices

Low-noise room-temperature terahertz detector based on the photothermoelectric effect of graphene oxide-Bi films

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Flicker Noise and Magnetic Resolution of Graphene Hall Sensors at Low Frequency

Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene.