What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to reduce the low - frequency 1/f noise in graphene field - effect transistors (FETs) while maintaining high electron mobility. Specifically, the researchers hope to design a new type of graphene device that can maintain the high electron mobility advantage of single - layer graphene (SLG) in high - frequency applications while reducing low - frequency noise. This noise is usually high in single - layer graphene devices and low in bilayer or multilayer graphene (BLG/FLG) devices. ### Specific Problem Description 1. **The Contradiction between High Electron Mobility and Low Noise**: - Single - layer graphene (SLG) has a very high electron mobility (up to 22,000 cm²/Vs), which makes it an ideal material for high - frequency applications. - However, SLG devices exhibit high 1/f noise at low frequencies, which will affect their performance in analog and radio - frequency (RF) circuits. - Bilayer or multilayer graphene (BLG/FLG) has relatively low electron mobility although its noise is low. 2. **The Influence of Metal - Graphene Contact on Noise**: - The contact between metal and graphene will cause the shift of the local Fermi level, thus causing large potential fluctuations and further increasing low - frequency noise. - This phenomenon is particularly obvious in SLG devices because the density of states (DOS) of SLG near the charge neutral point is low, so even a small amount of charge transfer will significantly affect the Fermi level. ### Solution To solve the above problems, the researchers proposed a new device structure - graphene field - effect transistors with graded thickness (GTG FETs). In this device: - **Channel Part**: The middle region is single - layer graphene (SLG) to maintain high electron mobility. - **Contact Region**: The regions near the source and drain are bilayer or multilayer graphene (BLG/FLG) to reduce the noise at the metal - graphene contact. In this way, GTG FETs combine the high mobility of SLG and the low - noise characteristics of BLG/FLG, thus achieving performance optimization. ### Experimental Verification The researchers verified the effectiveness of this new structure through experiments. The results show that the electron mobility of GTG FETs is close to that of SLG devices, while the low - frequency noise level is close to that of BLG devices. In addition, the experiments also show that the potential fluctuation at the metal - FLG contact is small, thus reducing the noise contribution. ### Physical Mechanism The researchers proposed a physical model to explain the reason for noise reduction: - **Difference in Electron Density of States**: Since the electron density of states of BLG/FLG is high, the same amount of charge transfer will cause a smaller shift of the Fermi level, thus reducing potential fluctuations. - **Interface Traps**: The potential fluctuation at the metal - FLG interface is small, so its contribution to low - frequency noise is also small. In conclusion, this paper aims to solve the contradiction between high electron mobility and low noise by designing a novel graphene device structure, thereby improving the performance of graphene - based electronic devices in high - frequency and analog circuits.

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