Abstract:Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 x 10(-9) mu m(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices.

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Low frequency 1/f noise in graphene FETs

Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

Graphene field effect transistor scaling for ultra-low-noise sensors

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Review of the Low-Frequency 1/f Noise in Graphene Devices

Graphene in Transistor Technology

Transistors: Charge Transfer and Current Fluctuations in Single Layer Graphene Transistors Modified by Self‐Assembled C60 Adlayers (small 14/2013)

Noise Reduction in Graphene Transistors

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Quantum behavior of graphene transistors near the scaling limit.