Abstract:Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 x 10(-9) mu m(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices.

Graphene field effect transistor scaling for ultra-low-noise sensors

Ultralow 1/f noise in epigraphene devices

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Low frequency 1/f noise in graphene FETs

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Biosensing Near the Neutrality Point of Graphene

Study of 1/f Noise in Graphene Based Field-Effect-Transistors

High performance sensors based on resistance fluctuations of single layer graphene transistors

Effect of ambient on the resistance fluctuations of graphene

An Improved Synthesis Route to Graphene for Molecular Sensor Applications

Field-Effect Sensor Based on Graphene Thin Films Fabricated by Layer-by-Layer Stacking

Low-frequency Flicker Noise in Stochastic Ionic Transport Across Atomically Thin Graphene Nanopores

Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Low Power Consumption and High Sensitivity Temperature Sensor Chip Based on Monolayer Suspended Graphene Field Effect Transistor

Sensing ion channels in neuronal networks with graphene transistors

Ultrasensitive Field-Effect Biosensors Enabled by the Unique Electronic Properties of Graphene

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Suspended graphene sensors with improved signal and reduced noise.

Toward the Ultimate Limit of Analyte Detection, in Graphene-Based Field-Effect Transistors