Noise Reduction in Graphene Transistors

Alexander A. Balandin

DOI: https://doi.org/10.1149/ma2010-01/23/1194

2010-02-05

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Guanxiong Liu,Sergey Rumyantsev,Michael Shur,Alexander A. Balandin

DOI: https://doi.org/10.1063/1.3676277

2011-12-25

Abstract:We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.

Mesoscale and Nanoscale Physics,Materials Science
Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

S. Rumyantsev,G. Liu,W. Stillman,M. Shur,A. A. Balandin

DOI: https://doi.org/10.48550/arXiv.1008.2990

2010-08-18

Materials Science

Abstract:We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.
Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Pan Wang,C. Perini,A. O'Hara,Blair R. Tuttle,En Xia Zhang,Huiqi Gong,L. Dong,Chundong Liang,Rong Jiang,Wenjun Liao,Daniel M. Fleetwood,R. D. Schrimpf,Eric M. Vogel,Sokrates T. Pantelides

DOI: https://doi.org/10.1109/TNS.2017.2761747

IF: 1.703

2018-01-01

IEEE Transactions on Nuclear Science

Abstract:We have performed a detailed evaluation of radiation-induced charge trapping and low-frequency noise for back-gated graphene transistors fabricated on a thermal SiO2 layer, with Al2O3 or hexagonal boron nitride passivation over-layers. Irradiation with positive or 0 V back-gate bias leads to negative shifts of the charge neutral point (CNP) of the graphene transistors; irradiation under negative b...
Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Xiao-Qing Miao,Lin-Juan Huang,Wen-Sheng Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2011.6213743

2011-01-01

Abstract:Numerical study is performed for an effective suppression of temperature rise in AlGaN/GaN high electron mobility transistors (HEMT) using our developed algorithm based on finite element method. Such a HEMT can be fabricated on SiC or other substrates with graphene inserted between the AlGaN and the GaN layers. The effects of both geometrical and physical parameters of the structure on the maximum temperature rise at the top surface of AlGaN layer are examined and compared. It is shown that as the semiconducting graphene has extreme large thermal conductivity in comparison with other semiconductor counterparts, it can be integrated into AlGaN/GaN HEMTs and other SOI active devices as an effective heat removal layer. Under such circumstances, their electrical performance and reliability can be enhanced greatly. Therefore, we are able to say that graphene has great potential in challenging thermal managements of some active devices operating at high temperature, which must be used for the development of some miniaturized system in package (SiP).
Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Maxim A. Stolyarov,Guanxiong Liu,Sergey L. Rumyantsev,Michael Shur,Alexander A. Balandin

DOI: https://doi.org/10.48550/arXiv.1506.04083

2015-06-13

Abstract:We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 {\mu}m2 Hz^-1, which is a factor of x5 - x10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

Mesoscale and Nanoscale Physics,Materials Science
Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Mengchuan Tian,Qianlan Hu,Chengru Gu,Xiong Xiong,Zhenfeng Zhang,Xuefei Li,Yanqing Wu

DOI: https://doi.org/10.1021/acsami.9b21070

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Low-frequency noise is a key performance limiting factor in almost all electronic systems. Thanks to its excellent characteristics such as exceptionally high electron mobility, graphene has high potential for future low noise electronic applications. Here we present an experimental analysis of low-frequency noise in dual-gate graphene transistors based on chemical vapor deposited Bernal-stacked bilayer graphene. The fabricated dual-gate bilayer graphene transistors adopt atomic layer deposited Al2O3 and HfSiO as top-gate and back-gate dielectric, respectively. Our results reveal an obvious M-shaped characteristic for the gate dependent noise behavior which can be well described by a quantitative charge-noise model. The minimal normalized noise spectral density at 10 Hz reaches as low as about 3×10-10 μm2·Hz-1 at room temperature, much lower than the best results previously reported for graphene devices. In addition, the observed noise level further decreases with more than ten times at temperature of 20 K. Meanwhile, the noise spectral density amplitude can be tuned by more than two orders of magnitude at temperature of 20 K by the dual-gate voltages.
Graphene in Transistor Technology

Cai Jiayuan,Wang Xin

DOI: https://doi.org/10.4028/www.scientific.net/amr.393-395.123

2011-01-01

Advanced Materials Research

Abstract:To improve the electronic property of transistor, especially in increasing cutoff frequency, studies were taking in looking for high electron mobility material. IBM et.al companies have paid a serious attention on graphene in brand new Carbon transistor, for it play a ultramundane good electric property in working state[1], the novel graphene channel based fast-speed FET helped A. K. Geim and K. S. Novoselov won the Noble Physics Prize in 2010.
Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

Morteza Kayyalha,Yong P. Chen

DOI: https://doi.org/10.1063/1.4930992

2015-08-11

Abstract:We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

Mesoscale and Nanoscale Physics
Electrical Noise and Transport Properties of Graphene

Nan Sun,Kristof Tahy,Huili Xing,Debdeep Jena,Gerald Arnold,Steven T. Ruggiero

DOI: https://doi.org/10.1007/s10909-013-0866-x

2013-01-01

Journal of Low Temperature Physics

Abstract:We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorporates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general characteristics of the data.
Comprehensive Study and Design of Graphene Transistor

Qian Cai,Jiachi Ye,Belal Jahannia,Hao Wang,Chandraman Patil,Rasul Al Foysal Redoy,Abdulrahman Sidam,Sinan Sameer,Sultan Aljohani,Muhammed Umer,Aseel Alsulami,Essa Shibli,Bassim Arkook,Yas Al-Hadeethi,Hamed Dalir,Elham Heidari

DOI: https://doi.org/10.3390/mi15030406

IF: 3.4

2024-03-18

Micromachines

Abstract:Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Graphene field effect transistor scaling for ultra-low-noise sensors

Ngoc Anh Minh Tran,Ibrahim Fakih,Oliver Durnan,Anjun Hu,Ayse Melis Aygar,Ilargi Napal,Alba Centeno,Amaia Zurutuza,Bertrand Reulet,Thomas Szkopek

DOI: https://doi.org/10.1088/1361-6528/abc0c8

IF: 3.5

2020-11-05

Nanotechnology

Abstract:Abstract The discovery of the field effect in graphene initiated the development of graphene field effect transistor (FET) sensors, wherein high mobility surface conduction is readily modulated by surface adsorption. For all graphene transistor sensors, low-frequency 1/ f noise determines sensor resolution, and the absolute measure of 1/ f noise is thus a crucial performance metric for sensor applications. Here we report a simple method for reducing 1/ f noise by scaling the active area of graphene FET sensors. We measured 1/ f noise in graphene FETs with size 5 μ m × 5 μ m to 5.12 mm × 5.12 mm, observing more than five orders of magnitude reduction in 1/ f noise. We report the lowest normalized graphene 1/ f noise parameter observed to date, 5 × 10 −13 , and we demonstrate a sulfate ion sensor with a record resolution of 1.2 × 10 −3 log molar concentration units. Our work highlights the importance of area scaling in graphene FET sensor design, wherein increased channel area improves sensor resolution.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Michael Loong Peng Tan,G.A.J. Amaratunga,Abdul Manaf Hashim,Vijay K. Arora

DOI: https://doi.org/10.1063/1.3587020

2011-01-01

AIP Conference Proceedings

Abstract:Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field‐effect transistor (FET) can be the basis for a quasi‐one‐ dimensional (Q1D) transistor technology. Recent experiments show that the on‐off ratio for GNR devices can be improved to level exploration of transistor action is justified. Here we use the tight–binding energy dipersion approximation, to assess the performance of semiconducting CNT and GNR is qualitatively in terms of drain current drive strength, bandgap and density of states for a specified device. By reducing the maximum conductance 4e2/h by half, we observed that our model has a particularly good fit with 50 nm channel single walled carbon nanotube (SWCNT) experimental data. Given the same bandgap, CNTs outperform GNRs due to valley degeneracy. Nevertheless, the variation of the device contacts will decide which transistor will exhibit better conductivity and thus higher ON currents.
Transistors: Charge Transfer and Current Fluctuations in Single Layer Graphene Transistors Modified by Self‐Assembled C60 Adlayers (small 14/2013)

Rui Wang,Shengnan Wang,Xiaowei Wang,Jakob A. S. Meyer,Per Hedegård,Bo W. Laursen,Zhihai Cheng,Xiaohui Qiu

DOI: https://doi.org/10.1002/smll.201370078

IF: 13.3

2013-01-01

Small

Abstract:The flicker noise in a ‘fullerene + graphene’ hybrid transistor is measured by X. H. Qiu and co-workers on page 2420 to reveal the electrical coupling between its graphene channel and C60 adsorbates. The charge associated with the trapping and detrapping processes at the C60/graphene interface induces current fluctuations in the device. The temperature-dependent noise characteristics indicate that the two contributions are related to Coulomb scattering and charge-exchange kinetics. This represents a practical template for developing graphene-based biosensors and nanoelectrodes.
A graphene Zener-Klein transistor cooled by a hyperbolic substrate

W. Yang,S. Berthou,X. Lu,Q. Wilmart,A. Denis,M. Rosticher,T. Taniguchi,K. Watanabe,G. Feve,J.M. Berroir,G. Zhang,C. Voisin,E. Baudin,B. Plaçais

DOI: https://doi.org/10.1038/s41565-017-0007-9

2018-04-25

Abstract:Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.

Mesoscale and Nanoscale Physics
Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

K. C. Yung,W. M. Wu,M. P. Pierpoint,F. V. Kusmartsev,K.C. Yung,W.M. Wu,M.P. Pierpoint,F.V. Kusmartsev

DOI: https://doi.org/10.48550/arXiv.1309.0205

2013-09-01

Materials Science

Abstract:The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nano-ribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunneling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.
Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Yifei Wang,Vinh X. Ho,Zachary. N. Henschel,Michael P. Cooney,Nguyen Q. Vinh

DOI: https://doi.org/10.48550/arXiv.2103.14812

2021-03-27

Materials Science

Abstract:We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A low-noise level of ~ 2.2 x 10^(-10) Hz-1 has been obtained at f = 10 Hz. The origin and physical mechanism of the noise can be interpreted by the McWhorter context, where fluctuations in the carrier number contribute dominantly to the low-frequency noise. Optimizing fabrication processes reduced the number of charged impurities in the graphene field-effect transistors. The study has provided insights into the underlying physical mechanisms of the noise at low-frequency for reducing the noise in graphene-based devices.
Stability Analysis of A Back-Gate Graphene Transistor in Air Environment

Jia Kunpeng,Yang Jie,Su Yajuan,Nie Pengfei,Zhong Jian,Liang Qingqing,Zhu Huilong

DOI: https://doi.org/10.1088/1674-4926/34/8/084004

2013-01-01

Journal of Semiconductors

Abstract:The stability of a graphene field effect transistor (GFET) is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization. In this work, a back-gate GFET has been fabricated and characterized, which is compatible with the CMOS process. The stability of a GFET in air has been studied and it is found that a GFET's electrical performance dramatically changes when exposed to air. The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically. Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.
Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

Nikolaos Mavredakis,Wei Wei,Emiliano Pallecchi,Dominique Vignaud,Henri Happy,Ramon Garcia Cortadella,Andrea Bonaccini Calia,Jose A. Garrido,David Jiménez,David Jiménez

DOI: https://doi.org/10.1021/acsaelm.9b00604

IF: 4.494

2019-11-18

ACS Applied Electronic Materials

Abstract:Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential, so it gets maximized as the drain voltage increases and the transistor’s length shrinks. Under these conditions though, short channel effects like velocity saturation (VS) should be considered. The reduction of LFN data due to the VS effect at short channel GFETs operating at high drain potential is for the first time shown in the present work. Carrier number and mobility fluctuations have been proven to be the main sources that generate LFN in GFETs. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. In this paper we have proposed a physics-based analytical LFN model that works under both low and high electric field conditions. The implemented model is validated with experimental data from CVD grown back-gated single layer GFETs operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near the charge neutrality point because of the effect of the VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at high gate voltages and is accurately described by the proposed model. The noise parameter related to LFN at contacts is found to have an exponential dependence with contact resistance, and to our knowledge, this is shown for the first time.

materials science, multidisciplinary,engineering, electrical & electronic
The role of contacts in graphene transistors: A scanning photocurrent study

T. Mueller,F. Xia,M. Freitag,J. Tsang,Ph. Avouris

DOI: https://doi.org/10.1103/PhysRevB.79.245430

2009-04-07

Abstract:A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces.

Mesoscale and Nanoscale Physics
Graphene Transistors: Promises and Challenges

Congqin Miao,Young Ju Park,Wei Liu,Jing Zhu,Yanjie Wang,Bo-Chao Huang,Jin Seok Woo,Ya‐Hong Xie

DOI: https://doi.org/10.1149/ma2010-02/30/1954

2010-01-01

Abstract:We will examine the theoretically anticipated and the experimentally observed electronic properties of graphene pertaining to transistor applications. We will present annotated discussion on the basic transistor technology building blocks including the channel (graphene fabrication and placement, and the maximum achievable current drive), gate stacks (high k-metal gate stack), and the source/drain contacts. The subject of graphene fabrication approach from the perspective of technology integration will be discussed. Where applicable, the discussion will be from the standpoint of RF applications.

Noise Reduction in Graphene Transistors

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Graphene in Transistor Technology

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

Electrical Noise and Transport Properties of Graphene

Comprehensive Study and Design of Graphene Transistor

Graphene field effect transistor scaling for ultra-low-noise sensors

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Transistors: Charge Transfer and Current Fluctuations in Single Layer Graphene Transistors Modified by Self‐Assembled C60 Adlayers (small 14/2013)

A graphene Zener-Klein transistor cooled by a hyperbolic substrate

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Stability Analysis of A Back-Gate Graphene Transistor in Air Environment

Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

The role of contacts in graphene transistors: A scanning photocurrent study

Graphene Transistors: Promises and Challenges